參數(shù)資料
型號(hào)： PSMN004-36P
廠(chǎng)商： NXP SEMICONDUCTORS
元件分類(lèi)： JFETs
英文描述： N-channel enhancement mode field-effect transistor
中文描述： 75 A, 36 V, 0.0054 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： PLASTIC, SC-46, 3 PIN
文件頁(yè)數(shù)： 5/13頁(yè)
文件大?。?/td> 294K
代理商： PSMN004-36P
Philips Semiconductors
PSMN004-36P/36B
N-channel enhancement mode field-effect transistor
Product data
Rev. 01 — 19 November 2001
5 of 13
9397 750 08621
Koninklijke Philips Electronics N.V. 2001. All rights reserved.
8.
Characteristics
Table 5:
T
j
= 25
°
C unless otherwise specified.
Symbol Parameter
Static characteristics
V
(BR)DSS
drain-source breakdown voltage
Characteristics
Conditions
Min
Typ
Max
Unit
I
D
= 0.25 mA; V
GS
= 0 V
T
j
= 25
°
C
T
j
=
55
°
C
I
D
= 1 mA; V
DS
= V
GS
;
Figure 9
T
j
= 25
°
C
T
j
= 175
°
C
T
j
=
55
°
C
V
DS
= 30 V; V
GS
= 0 V
T
j
= 25
°
C
T
j
= 175
°
C
V
GS
=
±
10 V; V
DS
= 0 V
V
GS
= 5 V; I
D
= 25 A;
Figure 7
and
8
T
j
= 25
°
C
T
j
= 175
°
C
V
GS
= 4.5 V; I
D
= 25 A;
Figure 7
and
8
T
j
= 25
°
C
V
GS
= 10 V; I
D
= 25 A;
Figure 7
and
8
T
j
= 25
°
C
36
32
V
V
V
GS(th)
gate-source threshold voltage
1
0.5
1.5
2
2.3
V
V
V
I
DSS
drain-source leakage current
0.05
1
10
500
100
μ
A
μ
A
nA
I
GSS
R
DSon
gate-source leakage current
drain-source on-state resistance
4
5
9.25
m
m
5.4
m
3.5
4
m
Dynamic characteristics
Q
g(tot)
total gate charge
Q
gs
gate-source charge
Q
gd
gate-drain (Miller) charge
C
iss
input capacitance
C
oss
output capacitance
C
rss
reverse transfer capacitance
t
d(on)
turn-on delay time
t
r
turn-on rise time
t
d(off)
turn-off delay time
t
f
turn-off fall time
Source-drain diode
V
SD
source-drain (diode forward) voltage I
S
= 25 A; V
GS
= 0 V;
Figure 12
V
SD
source-drain (diode forward) voltage I
S
= 75 A; V
GS
= 0 V;
Figure 12
t
rr
reverse recovery time
Q
r
recovered charge
I
D
= 75 A; V
DD
= 15 V; V
GS
= 5 V;
Figure 13
97
20
39
6000
1700
1400
45
220
435
320
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
GS
= 0 V; V
DS
= 20 V; f = 1 MHz;
Figure 11
V
DD
= 15 V; R
D
= 1.2
; V
GS
= 5 V; R
G
= 6
;
resistive load
0.85
1.1
400
1
1.2
V
V
ns
μ
C
I
S
= 20 A; dI
S
/dt =
100 A/
μ
s; V
GS
= 0 V
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