參數(shù)資料
型號(hào): PSMN002-25B
廠商: NXP SEMICONDUCTORS
元件分類(lèi): JFETs
英文描述: N-channel enhancement mode field-effect transistor
中文描述: 75 A, 25 V, 0.0029 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: PLASTIC, D2PAK-3
文件頁(yè)數(shù): 7/13頁(yè)
文件大?。?/td> 288K
代理商: PSMN002-25B
Philips Semiconductors
PSMN002-25 series
N-channel enhancement mode field-effect transistor
Product data
Rev. 01 — 22 October 2001
7 of 13
9397 750 08315
Koninklijke Philips Electronics N.V. 2001. All rights reserved.
I
D
= 1 mA; V
DS
= V
GS
Fig 9.
Gate-source threshold voltage as a function of
junction temperature.
T
j
= 25
°
C; V
DS
= 5 V
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
V
GS
= 0 V; f = 1 MHz
Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.
03af46
0
0.5
1
1.5
2
2.5
-60
-20
20
60
100
140
180
T
j
(oC)
V
GS(th)
(V)
max
min
typ
03aa36
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
I
D
(A)
0
0.5
1
1.5
2
2.5
3
V
GS
(V)
max
typ
min
03af44
102
103
104
105
10-1
1
10
102
V
DS
(V)
C
(pF)
C
iss
C
oss
C
rss
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PSMN002-25B,118 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PSMN002-25P 制造商:PHILIPS 制造商全稱(chēng):NXP Semiconductors 功能描述:N-channel enhancement mode field-effect transistor
PSMN002-25P,127 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PSMN003-25W 制造商:PHILIPS 制造商全稱(chēng):NXP Semiconductors 功能描述:N-channel logic level TrenchMOS transistor
PSMN003-25W,127 功能描述:MOSFET RAIL MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube