| 型號: | PSMN002-25B |
| 廠商: | NXP SEMICONDUCTORS |
| 元件分類: | JFETs |
| 英文描述: | N-channel enhancement mode field-effect transistor |
| 中文描述: | 75 A, 25 V, 0.0029 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝: | PLASTIC, D2PAK-3 |
| 文件頁數(shù): | 1/13頁 |
| 文件大?。?/td> | 288K |
| 代理商: | PSMN002-25B |

相關PDF資料 |
PDF描述 |
|---|---|
| PSMN002-25P | N-channel enhancement mode field-effect transistor |
| PSMN003-25W | N-channel logic level TrenchMOS transistor |
| PSMN003-30B | N-channel enhancement mode field-effect transistor |
| PSMN003-30P | N-channel enhancement mode field-effect transistor |
| PSMN004-25B | N-channel logic level TrenchMOS transistor |
相關代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PSMN002-25B,118 | 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PSMN002-25P | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel enhancement mode field-effect transistor |
| PSMN002-25P,127 | 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PSMN003-25W | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel logic level TrenchMOS transistor |
| PSMN003-25W,127 | 功能描述:MOSFET RAIL MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |