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參數(shù)資料
| 型號(hào)： | PSMN002-25B |
| 廠(chǎng)商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | JFETs |
| 英文描述： | N-channel enhancement mode field-effect transistor |
| 中文描述： | 75 A, 25 V, 0.0029 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, D2PAK-3 |
| 文件頁(yè)數(shù)： | 1/13頁(yè) |
| 文件大小： | 288K |
| 代理商： | PSMN002-25B |
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PSMN002-25P; PSMN002-25B
N-channel enhancement mode field-effect transistor
Rev. 01 — 22 October 2001
Product data
1.
Description
N-channel logic level field-effect power transistor in a plastic package using
TrenchMOS
1
technology.
Product availability:
PSMN002-25P in SOT78 (TO-220AB)
PSMN002-25B in SOT404 (D
2
-PAK)
2.
Features
I
Low on-state resistance
I
Fast switching.
3.
Applications
I
High frequency computer motherboard DC to DC converters
I
OR-ing applications.
4.
Pinning information
[1]
It is not possible to make connection to pin 2 of the SOT404 package.
1.
TrenchMOS is a trademark of Koninklijke Philips Electronics N.V.
Table 1:
Pin
1
2
3
mb
Pinning - SOT78 and SOT404, simplified outline and symbol
Description
Simplified outline
gate (g)
drain (d)
source (s)
drain (d)
Symbol
SOT78 (TO-220AB)
SOT404 (D
2-
PAK)
[1]
MBK106
1 2
mb
3
1
3
2
MBK116
mb
s
d
g
MBB076
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PSMN002-25P | N-channel enhancement mode field-effect transistor |
| PSMN003-25W | N-channel logic level TrenchMOS transistor |
| PSMN003-30B | N-channel enhancement mode field-effect transistor |
| PSMN003-30P | N-channel enhancement mode field-effect transistor |
| PSMN004-25B | N-channel logic level TrenchMOS transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PSMN002-25B,118 | 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PSMN002-25P | 制造商:PHILIPS 制造商全稱(chēng):NXP Semiconductors 功能描述:N-channel enhancement mode field-effect transistor |
| PSMN002-25P,127 | 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PSMN003-25W | 制造商:PHILIPS 制造商全稱(chēng):NXP Semiconductors 功能描述:N-channel logic level TrenchMOS transistor |
| PSMN003-25W,127 | 功能描述:MOSFET RAIL MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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