參數(shù)資料
型號(hào)： PPC5001T
廠商： NXP SEMICONDUCTORS
元件分類(lèi)： 功率晶體管
英文描述： NPN microwave power transistor
中文描述： C BAND, Si, NPN, RF POWER TRANSISTOR
封裝： METAL, CERAMIC PACKAGE-2
文件頁(yè)數(shù)： 4/8頁(yè)
文件大?。?/td> 58K
代理商： PPC5001T
1997 Mar 03
4
Philips Semiconductors
Product specification
NPN microwave power transistor
PPC5001T
THERMAL CHARACTERISTICS
CHARACTERISTICS
T
mb
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
T
j
= 75
°
C
MAX.
UNIT
R
th j-mb
thermal resistance from junction to mounting base
24
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
μ
A
nA
V
V
pF
I
CBO
I
EBO
V
(BR)CBO
V
(BR)CER
C
cb
collector cut-off current
emitter cut-off current
collector-base breakdown voltage
collector-emitter breakdown voltage
collector-base capacitance
V
CB
= 24 V; I
E
= 0
V
EB
= 1.5 V; I
C
= 0
I
C
= 500
μ
A; I
E
= 0
I
C
= 2.5 mA; R
BE
= 70
V
CB
= 18 V; V
EB
= 1.5 V;
I
E
= I
C
= 0; f = 1 MHz
V
CE
= 18 V; V
EB
= 1.5 V;
I
E
= I
C
= 0; f = 1 MHz
V
CB
= 10 V; V
EB
= 1 V;
I
C
= I
E
= 0; f = 1 MHz
40
35
1.4
100
200
C
ce
collector-emitter capacitance
0.9
pF
C
eb
emitter-base capacitance
5.5
pF
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