參數(shù)資料
型號： PPC5001T
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： NPN microwave power transistor
中文描述： C BAND, Si, NPN, RF POWER TRANSISTOR
封裝： METAL, CERAMIC PACKAGE-2
文件頁數(shù)： 2/8頁
文件大?。?/td> 58K
代理商： PPC5001T
1997 Mar 03
2
Philips Semiconductors
Product specification
NPN microwave power transistor
PPC5001T
FEATURES
Diffused emitter ballasting resistors providing excellent
current sharing and withstanding a high VSWR
Interdigitated structure provides high emitter efficiency
Gold metallization realizes very stable characteristics
and excellent lifetime
Multicell geometry gives good balance of dissipated
power and low thermal resistance
APPLICATIONS
Intended for use in common-collector oscillator circuits in
military and professional applications up to 5 GHz.
DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in
a SOT447A metal ceramic flange package.
PINNING - SOT447A
PIN
DESCRIPTION
1
2
3
base
emitter
collector
Fig.1 Simplified outline and symbol.
Marking code:
395
handbook, halfpage
e
c
b
MAM331
Side view
3
2
1
QUICK REFERENCE DATA
Microwave performance up to T
mb
= 25
°
C in an oscillator circuit up to 5 GHz; typical values.
MODE OF OPERATION
f
(GHz)
V
CE
(V)
I
C
(mA)
P
L
(mW)
Class A (CW)
5
20
200
450
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