參數(shù)資料
型號(hào): PMK27XP
廠商: NXP SEMICONDUCTORS
元件分類(lèi): 小信號(hào)晶體管
英文描述: P-channel extremely low level FET
中文描述: 6500 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA
封裝: PLASTIC, MS-012, SO-8
文件頁(yè)數(shù): 7/11頁(yè)
文件大?。?/td> 83K
代理商: PMK27XP
Philips Semiconductors
PMK27XP
P-channel extremely low level FET
Product data
Rev. 01 — 15 January 2004
7 of 11
9397 750 11549
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
I
D
=
250
μ
A; V
DS
= V
GS
Fig 9.
Gate-source threshold voltage as a function of
junction temperature; typical values.
V
GS
= 0 V; f = 1 MHz
Fig 10. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
V
GS
= 0 V
I
D
=
6.5 A; V
DD
=
15 V
Fig 12. Gate-source voltage as a function of gate
charge; typical values.
Fig 11. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
03an42
1.2
0.8
0.4
0
100
0
100
200
Tj (
°
C)
VGS(th)
(
V)
03an40
0
600
1200
1800
20
15
10
5
0
C
(pF)
Ciss
Coss
Crss
VDS(
V)
03am07
32
24
16
8
0
1.2
0.8
0.4
0
VSD (
V)
Tj = 25
°
C
IS
(
A)
03am03
6
4
2
0
0
4
8
12
16
QG (nC)
VGS
(
V)
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