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參數(shù)資料
| 型號： | PMK27XP |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | P-channel extremely low level FET |
| 中文描述： | 6500 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA |
| 封裝： | PLASTIC, MS-012, SO-8 |
| 文件頁數(shù)： | 2/11頁 |
| 文件大小： | 83K |
| 代理商： | PMK27XP |
Philips Semiconductors
PMK27XP
P-channel extremely low level FET
Product data
Rev. 01 — 15 January 2004
2 of 11
9397 750 11549
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
4.
Limiting values
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
V
DS
drain-source voltage (DC)
I
D
drain current
Limiting values
Conditions
T
amb
= 25
°
C
V
GS
=
4.5 V; t
p
<
10s
T
amb
= 25
°
C;
Figure 2
T
amb
= 70
°
C;
Figure 2
V
GS
=
4.5 V; t
p
> 10s
T
amb
= 25
°
C;
Figure 2
T
amb
= 70
°
C;
Figure 2
Min
-
Max
20
Unit
V
-
-
6.5
5.2
A
A
-
-
-
-
-
-
55
55
4.6
3.7
12
32
2.5
1.25
+150
+150
A
A
V
A
W
W
°
C
°
C
V
GS
I
DM
P
tot
P
tot
T
stg
T
j
Source-drain diode
I
S
source (diode forward) current (DC)
gate-source voltage (DC)
peak drain current
total power dissipation
total power dissipation
storage temperature
junction temperature
T
amb
= 25
°
C; pulsed; t
p
≤
300
μ
s;
Figure 3
T
amb
= 25
°
C; t
p
<
10s;
Figure 1
T
amb
= 25
°
C; t
p
> 10s;
Figure 1
T
amb
= 25
°
C
-
1.7
A
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