參數(shù)資料
型號(hào)： PMK27XP
廠商： NXP SEMICONDUCTORS
元件分類： 小信號(hào)晶體管
英文描述： P-channel extremely low level FET
中文描述： 6500 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA
封裝： PLASTIC, MS-012, SO-8
文件頁數(shù)： 5/11頁
文件大小： 83K
代理商： PMK27XP
Philips Semiconductors
PMK27XP
P-channel extremely low level FET
Product data
Rev. 01 — 15 January 2004
5 of 11
9397 750 11549
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
6.
Characteristics
Table 5:
T
j
= 25
°
C unless otherwise specified.
Symbol Parameter
Static characteristics
V
(BR)DSS
drain-source breakdown voltage
V
GS(th)
gate-source threshold voltage
I
DSS
drain-source leakage current
Characteristics
Conditions
Min
Typ
Max
Unit
I
D
=
250
μ
A; V
GS
= 0 V
I
D
=
250
μ
A; V
DS
= V
GS
;
Figure 9
V
GS
= 0 V; V
DS
=
20 V
V
GS
= 0 V; V
DS
=
16 V; T
j
= 70
°
C
V
GS
=
±
12 V; V
DS
= 0 V
V
GS
=
4.5 V; I
D
=
6.5 A;
Figure 7
and
8
V
GS
=
2.5 V; I
D
=
5 A;
Figure 7
and
8
20
0.6
-
-
-
-
-
-
-
-
-
-
27
46
-
-
1
5
100
35
60
V
V
μ
A
μ
A
nA
m
m
I
GSS
R
DSon
gate-source leakage current
drain-source on-state resistance
Dynamic characteristics
Q
g(tot)
total gate charge
Q
gs
gate-source charge
Q
gd
gate-drain (Miller) charge
C
iss
input capacitance
C
oss
output capacitance
C
rss
reverse transfer capacitance
t
d(on)
turn-on delay time
t
r
rise time
t
d(off)
turn-off delay time
t
f
fall time
Source-drain diode
V
SD
source-drain (diode forward) voltage I
S
=
6.5 A; V
GS
= 0 V;
Figure 11
I
D
=
6.5 A; V
DD
=
15 V; V
GS
=
4.5 V;
Figure 12
-
-
-
-
-
-
-
-
-
-
13.6
2.3
5.5
1044
273
211
10
35
38
50
-
-
-
-
-
-
-
-
-
-
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
GS
= 0 V; V
DS
=
10 V; f = 1 MHz;
Figure 10
V
DD
=
15 V; I
D
=
6.5 A; V
GS
=
4.5 V;
R
G
= 6
-
-
1.5
V
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