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參數(shù)資料
| 型號(hào)： | PMBTH10 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | NPN 1 GHz general purpose switching transistor |
| 中文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SOT-23, 3 PIN |
| 文件頁(yè)數(shù)： | 3/7頁(yè) |
| 文件大小： | 52K |
| 代理商： | PMBTH10 |
September 1995
3
Philips Semiconductors
Product specification
NPN 1 GHz general purpose switching transistor
PMBTH10
THERMAL RESISTANCE
Note
1.
T
s
is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
T
j
= 25
°
C.
SYMBOL
PARAMETER
THERMAL RESISTANCE
R
th j-s
from junction to soldering point (note 1)
260 K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
0.5
0.95
100
100
0.7
UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
V
CE sat
V
BE on
I
CBO
I
EBO
h
FE
C
re
collector-base breakdown voltage
collector-emitter breakdown voltage
emitter-base breakdown voltage
collector-emitter saturation voltage
base-emitter ON voltage
collector-base cut-off current
emitter-base cut-off current
DC current gain
collector-emitter feedback
capacitance
collector-base feedback capacitance
open emitter; I
C
= 100
μ
A; I
E
= 0
open base; I
C
= 1 mA; I
B
= 0
open collector; I
E
= 10
μ
A; I
C
= 0
I
C
= 4 mA; I
B
= 0.4 mA
V
CE
= 10 V; I
C
= 4 mA
V
CB
= 25 V; I
E
= 0
V
CB
= 25 V; I
C
= 0
V
CE
= 10 V; I
C
= 4 mA
V
CB
= 10 V; I
E
= i
e
= 0;
f = 1 MHz
V
CB
= 10 V; I
C
= i
c
= 0;
f = 1 MHz
V
CE
= 10 V; I
C
= 4 mA;
f = 100 MHz; T
amb
= 25
°
C
V
CB
= 10 V; I
C
= 4 mA;
f = 100 MHz; T
amb
= 25
°
C
30
25
3
60
V
V
V
V
V
nA
nA
pF
C
rb
0.35
0.65
pF
f
T
transition frequency
650
MHz
r
b
C
c
collector-base time constant
9
ps
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