參數(shù)資料
型號(hào): PMBTH10
廠商: NXP SEMICONDUCTORS
元件分類: 小信號(hào)晶體管
英文描述: NPN 1 GHz general purpose switching transistor
中文描述: UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封裝: PLASTIC, SOT-23, 3 PIN
文件頁數(shù): 2/7頁
文件大?。?/td> 52K
代理商: PMBTH10
September 1995
2
Philips Semiconductors
Product specification
NPN 1 GHz general purpose switching transistor
PMBTH10
FEATURES
Low cost
High power gain.
DESCRIPTION
The PMBTH10 is a general purpose
silicon npn transistor, encapsulated in
a SOT23 plastic envelope. Its pnp
complement is the PMBTH81.
PINNING
PIN
DESCRIPTION
Code: V30
base
emitter
collector
1
2
3
Fig.1 SOT23.
fpage
MSB003
Top view
1
2
3
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
Note
1.
T
s
is the temperature at the soldering point of the collector tab.
SYMBOL
PARAMETER
CONDITIONS
MIN.
60
MAX.
UNIT
V
CBO
V
CEO
V
EBO
P
tot
h
FE
C
re
collector-base voltage
collector-emitter voltage
emitter-base voltage
total power dissipation
DC current gain
collector-emitter feedback
capacitance
collector-base feedback
capacitance
transition frequency
open emitter
open base
open collector
T
s
= 45
°
C (note 1)
V
CE
= 10 V; I
C
= 4 mA
V
CB
= 10 V; I
E
= 0; f = 1 MHz
30
25
3
400
0.7
V
V
V
mW
pF
C
rb
V
CB
= 10 V; I
E
= 0; f = 1 MHz
0.35
0.65
pF
f
T
V
CE
= 10 V; I
C
= 4 mA;
f = 100 MHz; T
amb
= 25
°
C
V
CE
= 10 V; I
C
= 4 mA;
f = 100 MHz; T
amb
= 25
°
C
650
MHz
r
b
C
c
collector-base time constant
9
ps
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
open emitter
open base
open collector
65
30
25
3
40
400
150
150
V
V
V
mA
mW
°
C
°
C
T
s
= 45
°
C (note 1)
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