參數(shù)資料
型號： PMBT3904D
廠商： NXP SEMICONDUCTORS
元件分類： 小信號晶體管
英文描述： SPLIT BOLT CONNECTOR
中文描述： 100 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝： PLASTIC, SMD, SC-74, 6 PIN
文件頁數(shù)： 3/8頁
文件大?。?/td> 66K
代理商： PMBT3904D
1999 Dec 15
3
Philips Semiconductors
Product specification
NPN switching double transistor
PMBT3904D
THERMAL CHARACTERISTICS
Note
1.
Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
2
.
CHARACTERISTICS
T
amb
= 25
°
C unless otherwise specified.
Note
1.
Pulse test: t
p
≤
300
μ
s;
δ ≤
0.02.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
208
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per transistor
I
CBO
I
EBO
h
FE
collector cut-off current
emitter cut-off current
DC current gain
I
E
= 0; V
CB
= 30 V
I
C
= 0; V
EB
= 6 V
V
CE
= 1 V; note 1; Fig.3
I
C
= 0.1 mA
I
C
= 1 mA
I
C
= 10 mA
I
C
= 50 mA
I
C
= 100 mA
I
C
= 10 mA; I
B
= 1 mA
I
C
= 50 mA; I
B
= 5 mA
I
C
= 10 mA; I
B
= 1 mA
I
C
= 50 mA; I
B
= 5 mA
I
E
= i
e
= 0; V
CB
= 5 V; f = 1 MHz
I
C
= i
c
= 0; V
BE
= 500 mV; f = 1 MHz
I
C
= 10 mA; V
CE
= 20 V; f = 100 MHz
I
C
= 100
μ
A; V
CE
= 5 V; R
S
= 1 k
;
f = 10 Hz to 15.7 kHz
50
50
nA
nA
60
80
100
60
30
650
300
300
200
200
850
950
4
8
5
V
CEsat
collector-emitter saturation
voltage
mV
mV
mV
mV
pF
pF
MHz
dB
V
BEsat
base-emitter saturation voltage
C
c
C
e
f
T
F
collector capacitance
emitter capacitance
transition frequency
noise figure
Switching times (between 10% and 90% levels);
(see Fig.2)
t
on
t
d
t
r
t
off
t
s
t
f
turn-on time
delay time
rise time
turn-off time
storage time
fall time
I
Con
= 10 mA;I
Bon
= 1 mA;V
CC
= 3 V;
V
BB
=
1.9 V
65
35
35
240
200
50
ns
ns
ns
ns
ns
ns
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