參數(shù)資料
型號: PMBT3640
廠商: NXP SEMICONDUCTORS
元件分類: 小信號晶體管
英文描述: PNP 1 GHz switching transistor
中文描述: UHF BAND, Si, PNP, RF SMALL SIGNAL TRANSISTOR
封裝: PLASTIC, SOT-23, 3 PIN
文件頁數(shù): 3/5頁
文件大小: 31K
代理商: PMBT3640
September 1995
3
Philips Semiconductors
Product specification
PNP 1 GHz switching transistor
PMBT3640
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Off characteristics
V
(BR)CBO
V
(BR)CES
V
(BR)EBO
I
CES
collector-base breakdown voltage
collector-emitter breakdown voltage
emitter-base breakdown voltage
collector cut-off current
I
C
= 100
μ
A; I
E
= 0
I
C
= 100
μ
A; V
BE
= 0
I
E
= 100
μ
A; I
C
= 0
V
CE
= 6 V; V
BE
= 0
V
CE
= 6 V; V
BE
= 0; T
amb
= 65
°
C
V
CE
= 6 V; V
BE
= 0
12
12
4
0.01
1
10
V
V
V
μ
A
μ
A
nA
I
B
On characteristics; pulse test: pulse width
300
μ
s, duty cycle
2%.
h
FE
DC current gain
base current
I
C
= 10 mA;
V
CE
= 0.3 V
I
C
= 50 mA;
V
CE
= 1 V
I
C
= 10 mA;
I
B
= 1 mA
I
C
= 50 mA;
I
B
= 5 mA
I
C
= 10 mA;
I
B
= 1 mA; T
amb
= 65
°
C
I
C
= 10 mA;
I
B
= 0.5 mA
I
C
= 10 mA;
I
B
= 1 mA
I
C
= 50 mA;
I
B
= 5 mA
30
20
0.75
0.8
120
0.2
0.6
0.25
0.95
1
1.5
V
CEsat
collector-emitter saturation voltage
V
V
V
V
V
V
V
BEsat
base-emitter saturation voltage
Small-signal characteristics
f
T
transition frequency
I
C
= 10 mA;
V
CE
= 5 V;
f = 100 MHz
I
E
= 0;
V
CB
= 5 V; f = 1 MHz
I
C
= 0;
V
EB
= 0.5 V; f = 1 MHz
500
MHz
C
c
C
e
output capacitance
input capacitance
3.5
3.5
pF
pF
Switching times
t
d
delay time
V
CC
= 6 V;
I
C
= 50 mA;
V
BE(off)
= 1.9 V;
I
B1
= 5 mA
V
CC
= 6 V;
I
C
= 50 mA;
I
B1
=
I
B2
= 5 mA
V
CC
= 6 V;
I
C
= 50 mA;
V
BE(off)
= 1.9 V;
I
B1
= 5 mA
V
CC
= 6 V;
I
C
= 50 mA;
I
B1
=
I
B2
= 5 mA
V
CC
= 6 V;
I
C
= 50 mA;
V
BE(off)
= 1.9 V;
I
B1
= 5 mA
V
CC
= 1.5 V;
I
C
= 10 mA;
I
B1
= 0.5 mA
V
CC
= 6 V;
I
C
= 50 mA;
V
BE(off)
= 1.9 V;
I
B1
= I
B2
= 5 mA
V
CC
= 1.5 V;
I
C
= 10 mA;
I
B1
= I
B2
= 0.5 mA
10
ns
t
s
storage time
20
ns
t
r
rise time
30
ns
t
f
fall time
12
ns
t
on
turn-on time
25
ns
60
ns
t
off
turn-off time
35
ns
75
ns
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