參數(shù)資料
型號(hào): PMBFJ212
廠商: NXP SEMICONDUCTORS
元件分類: 小信號(hào)晶體管
英文描述: N-channel field-effect transistors
中文描述: 25 V, N-CHANNEL, Si, SMALL SIGNAL, JFET
封裝: PLASTIC, SOT-23, 3 PIN
文件頁數(shù): 4/12頁
文件大?。?/td> 100K
代理商: PMBFJ212
1997 Dec 01
4
Philips Semiconductors
Product specification
N-channel field-effect transistors
PMBFJ210; PMBFJ211; PMBFJ212
STATIC CHARACTERISTICS
T
j
= 25
°
C.
DYNAMIC CHARACTERISTICS
T
amb
= 25
°
C.
SYMBOL
PARAMETER
CONDITIONS
I
G
=
1
μ
A; V
DS
= 0
I
D
= 1 nA; V
DS
= 15 V
MIN.
MAX.
25
UNIT
V
(BR)GSS
V
GSoff
gate-source breakdown voltage
gate-source cut-off voltage
PMBFJ210
PMBFJ211
PMBFJ212
gate-source forward voltage
drain current
PMBFJ10
PMBFJ11
PMBFJ12
reverse gate leakage current
common-source transfer admittance
PMBFJ210
PMBFJ211
PMBFJ212
common source output admittance
PMBFJ210
PMBFJ211
PMBFJ212
V
1
2.5
4
3
4.5
6
1
V
V
V
V
V
GSS
I
DSS
I
G
= 0; V
DS
= 0
V
GS
= 0; V
DS
= 15 V
2
7
15
15
20
40
100
mA
mA
mA
pA
I
GSS
y
fs
V
GS
=
15 V; V
DS
= 0
V
GS
= 0; V
DS
= 15 V
4
6
7
12
12
12
mS
mS
mS
y
os
V
GS
= 0; V
DS
= 15 V
150
200
200
μ
S
μ
S
μ
S
SYMBOL
PARAMETER
CONDITIONS
TYP.
UNIT
C
is
input capacitance
V
DS
= 15 V; V
GS
=
10 V; f = 1 MHz
V
DS
= 15 V; V
GS
= 0; f = 1 MHz
V
DS
= 15 V; V
GS
=
10 V; f = 1 MHz
V
DS
= 15 V; V
GS
= 0; f = 1 MHz
V
DS
= 15 V; V
GS
=
10 V; f = 1 MHz
V
DS
= 15 V; V
GS
= 0; f = 1 MHz
V
DS
= 15 V; V
GS
= 0; f = 100 MHz
V
DS
= 15 V; V
GS
= 0; f = 450 MHz
V
DS
= 15 V; V
GS
= 0; f = 100 MHz
V
DS
= 15 V; V
GS
= 0; f = 450 MHz
V
DS
= 15 V; V
GS
= 0; f = 100 MHz
V
DS
= 15 V; V
GS
= 0; f = 450 MHz
V
DS
= 15 V; V
GS
= 0; f = 100 MHz
V
DS
= 15 V; V
GS
= 0; f = 450 MHz
V
DS
= 15 V; V
GS
= 0; f = 1 kHz
2
4
0.8
2
0.8
0.9
70
1.1
7.5
7.5
8
90
95
200
5
pF
pF
pF
pF
pF
pF
μ
S
mS
mS
mS
μ
S
μ
S
μ
S
μ
S
nV/
Hz
C
os
output capacitance
C
rs
feedback capacitance
g
is
common source input conductance
g
fs
common source transfer conductance
g
rs
common source feedback conductance
g
os
common source output conductance
V
n
equivalent input noise voltage
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