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參數(shù)資料
| 型號： | PMBFJ211 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | N-channel field-effect transistors |
| 中文描述： | 25 V, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 封裝： | PLASTIC, SOT-23, 3 PIN |
| 文件頁數(shù)： | 2/12頁 |
| 文件大?。?/td> | 100K |
| 代理商： | PMBFJ211 |
1997 Dec 01
2
Philips Semiconductors
Product specification
N-channel field-effect transistors
PMBFJ210; PMBFJ211; PMBFJ212
FEATURES
High speed switching
Interchangeability of drain and source connections
High impedance.
APPLICATIONS
Analog switches
Choppers, multiplexers and commutators
Audio amplifiers.
DESCRIPTION
N-channel symmetrical junction field-effect transistor in a
SOT23 package.
CAUTION
This product is supplied in anti-static packing to prevent
damage caused by electrostatic discharge during
transport and handling. For further information, refer to
Philips specs.: SNW-EQ-608, SNW-FQ-302A and
SNW-FQ-302B.
PINNING - SOT23
PIN
SYMBOL
DESCRIPTION
1
2
3
s
d
g
source
drain
gate
Fig.1 Simplified outline and symbol.
Marking codes:
PMBFJ210: M68.
PMBFJ211: M69.
PMBFJ212: M70.
handbook, halfpage
1
2
g
d
s
3
Top view
MAM385
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
±
25
UNIT
V
DS
V
GSoff
drain-source voltage
gate-source cut-off voltage
PMBFJ210
PMBFJ211
PMBFJ212
drain current
PMBFJ210
PMBFJ211
PMBFJ212
total power dissipation
common-source transfer admittance
PMBFJ210
PMBFJ211
PMBFJ212
V
I
D
= 1 nA; V
DS
= 15 V
1
2.5
4
3
4.5
6
V
V
V
I
DSS
V
GS
= 0; V
DS
= 15 V
2
7
15
15
20
40
250
mA
mA
mA
mW
P
tot
y
fs
T
amb
≤
25
°
C
V
GS
= 0; V
DS
= 15 V
4
6
7
12
12
12
mS
mS
mS
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| PMBFJ212 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel field-effect transistors |
| PMBFJ308 | 制造商:NXP Semiconductors 功能描述:Transistor JFET N-Channel 25V TO236AB |
| PMBFJ308 T/R | 功能描述:射頻JFET晶體管 TAPE7 FET-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:N-Channel 正向跨導 gFS（最大值/最小值）: 電阻汲極/源極 RDS（導通）: 漏源電壓 VDS:40 V 閘/源截止電壓:5 V 閘/源擊穿電壓:40 V 最大漏極/柵極電壓:40 V 漏極電流（Vgs=0 時的 Idss）:25 mA to 75 mA 漏極連續(xù)電流: 功率耗散:250 mW 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-23 封裝:Reel |
| PMBFJ308,215 | 功能描述:射頻JFET晶體管 TAPE7 FET-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:N-Channel 正向跨導 gFS（最大值/最小值）: 電阻汲極/源極 RDS（導通）: 漏源電壓 VDS:40 V 閘/源截止電壓:5 V 閘/源擊穿電壓:40 V 最大漏極/柵極電壓:40 V 漏極電流（Vgs=0 時的 Idss）:25 mA to 75 mA 漏極連續(xù)電流: 功率耗散:250 mW 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-23 封裝:Reel |
| PMBFJ308T/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 25V V(BR)DSS | 12MA I(DSS) | TO-236 |
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