參數(shù)資料
型號: PM50100K
廠商: Hitachi,Ltd.
英文描述: Silicon N-Channel Power MOS FET Module(N溝道功率MOSFET模塊)
中文描述: 硅N溝道功率場效應(yīng)晶體管模塊(不適用溝道功率MOSFET的模塊)
文件頁數(shù): 7/9頁
文件大?。?/td> 69K
代理商: PM50100K
PM50100K
7
Switching Characteristics
3000
S
0.1
1
10
Drain Current I (A)
V = 10 V
duty < 1%
t
t
t
t
100
d (off)
r
f
d (on)
1000
100
10
30
300
Reverse Drain Current vs.
Source to Drain Voltage
100
80
60
40
20
R
D
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage V (V)
V = 0, –5 V
V = 10 V
Pulse Test
Normalized Transient Thermal Impedance vs. Pulse Width
1
0.1
0.01
0.001
N
100 μ
1 m
10 m
100 m
1
10
P
PW
T
D =
T
PW
DM
γ
θ
ch – C (t) = (t) · ch – C
ch – C = 0.312°C/W,T = 25°C
θ
θ
Pulse Width PW (s)
γ
D = 1
0.5
0.2
0.1
0.05
0.02
1 shot puse
P.G.
Vin
10 V
50
Vin Monitor
D.U.T
Vout Monitor
R
L
V ..
Switching Time Test Circuit
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