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參數(shù)資料
| 型號： | PM50100K |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N-Channel Power MOS FET Module(N溝道功率MOSFET模塊) |
| 中文描述： | 硅N溝道功率場效應晶體管模塊（不適用溝道功率MOSFET的模塊） |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 69K |
| 代理商： | PM50100K |
PM50100K
3
Electrical Characteristics
(Ta = 25°C) (Per FET chip)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
500
—
—
V
I
D
= 10 mA, V
GS
= 0 V
Gate to source leak current
I
GSS
V
(BR)GSS
—
—
±10
μA
V
GS
= ± 25 V, V
DS
= 0 V
I
G
= ±100 μA, V
DS
= 0 V
Gate to source breakdown
voltage
±30
—
—
V
Drain leak current
I
DSS
V
GS(th)
—
—
1
mA
V
DS
= 400 V, V
GS
= 0 V
I
D
= 1 mA, V
DS
= 10 V
Gate to source threshold
voltage
2.0
—
3.0
V
Drain to source saturation
voltage
V
DS(on)
—
4.0
5.0
V
I
D
= 50 A, V
GS
= 10 V*
1
Static drain to source on state
resistance
R
DS(on)
—
0.08
0.10
I
D
= 50 A, V
GS
= 10 V*
1
Forward transfer admittance
|y
fs
|
Ciss
—
55
—
S
I
D
= 50 A, V
DS
= 10 V*
V
DS
= 10 V, V
GS
= 0 V
f = 1 MHz
1
Input capacitance
—
14600
—
pF
Output capacitance
Coss
—
3500
—
Reverse transfer capacitance
Crss
—
650
—
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
—
200
—
ns
I
D
= 50 A, V
GS
= 10 V
Rg = 50
R
L
= 0.6
Rise time
—
690
—
Turn-off delay time
—
760
—
Fall time
—
260
—
Body to drain diode forward
voltage
—
1.6
—
V
I
F
= 100 A, V
GS
= 0 V
Body to drain diode reverse
recovery time
Note
1. Pulse Test
t
rr
—
140
—
ns
I
= 100 A, V
= 0 V
di/dt = 100 A/μs
Mechanical Characteristics
Item
Symbol
Condition
Rating
Unit
Fixing strength
—
Mounting into main-terminal with M4 screw
1.45 to 1.95
N-m
—
Mounting into heat sink with M5 screw
1.95 to 2.9
N-m
Weight
—
Typical value
380
g
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