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參數(shù)資料
| 型號(hào)： | PM50100K |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N-Channel Power MOS FET Module(N溝道功率MOSFET模塊) |
| 中文描述： | 硅N溝道功率場效應(yīng)晶體管模塊（不適用溝道功率MOSFET的模塊） |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 69K |
| 代理商： | PM50100K |
PM50100K
2
Outline
LF-K
Equivalent Circuit
No
S1
D1
S2
D2
G1
S1
G2
S2
Electrode
Source 1
Drain 1
Source 2
Drain 2
Gate 1
Source 1
Gate 2
Source 2
Terminals
M5 screw
M5 screw
M5 screw
M5 screw
#110
#110
#110
#110
Remarks
Power terminal
Signal terminals
D2
S2
D1
G2S2S1
G1
S1
D1
S1/D2
S2
G1
S1
G2
S2
Rg
Rg
Absolute Maximum Ratings
(Ta = 25°C) (Per FET chip)
Item
Symbol
Rating
Unit
Drain source voltage
V
(BR)DSS
V
(BR)GSS
I
D
I
D(peak)
I
DR
I
DR(peak)
Pch*
500
V
Gate source voltage
±30
V
Drain current
100
A
Drain peak current
240
A
Body to drain diode reverse drain current
100
A
Body to drain diode reverse peak current
240
A
Channel dissipation
1
400
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–45 to +125
°C
Insulation dielectric
Notes 1. Value at Ta = 25°C
2. Base to terminals AC minute
Viso*
2
2000
Vrms
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