參數(shù)資料
型號(hào): PM45502C
廠商: Hitachi,Ltd.
英文描述: Silicon N-Channel Power MOS FET Module
中文描述: 硅N溝道功率MOS場效應(yīng)晶體管模塊
文件頁數(shù): 3/9頁
文件大?。?/td> 50K
代理商: PM45502C
PM45502C
3
Electrical Characteristics (Ta = 25°C) (Per FET chip)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
450
V
I
D = 10 mA, VGS = 0
Gate to source leak current
I
GSS
±50
A
V
GS = ±16 V, VDS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±20
V
I
G = ±100 A, VDS = 0
Zero gate voltage drain current I
DSS
——1
mA
V
DS = 360 V, VGS = 0
Gate to source threshold
voltage
V
GS(th)
1.5
4.0
V
I
D = 1 mA, VDS = 10 V
Drain to source saturation
voltage
V
DS(on)
2.0
3.0
V
I
D = 25 A, VGS = 10 V*
1
Static Drain to source on state
resistance
R
DS(on)
0.08
0.12
I
D = 25 A, VGS = 10 V*
1
Forward transfer admittance
|y
fs|
2540—
S
I
D = 25 A, VDS = 10 V*
1
Input capacitance
Ciss
10250
pF
V
DS = 10 V, VGS = 0
Output capacitance
Coss
3600
pF
f = 1 MHz
Reverse transfer capacitance
Crss
400
pF
Turn-on delay time
t
d(on)
150
ns
I
D = 25 A, VGS = 10 V
Rise time
t
r
700
ns
R
L = 1.2
Turn-off delay time
t
d(off)
800
ns
Fall time
t
f
600
ns
Body to drain diode forward
voltage
V
DF
1.2
V
I
F = 25 A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
200
ns
I
F = 25 A, VGS = 0
diF/dt = 100 A/s
Note
1. Pulse Test
Mechanical Characteristics
Item
Symbol
Condition
Rating
Unit
Fixing strength
Mounting into main-terminal with M5 screw
15 to 20
kgcm
Mounting into heat sink with M6 screw
20 to 30
kgcm
Weight
Typical value
300
g
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