參數(shù)資料
型號： PIC12CR509A
廠商： Microchip Technology Inc.
英文描述： 8-Pin, 8-Bit CMOS Microcontrollers
中文描述： 8引腳，8位CMOS微控制器
文件頁數(shù)： 81/113頁
文件大?。?/td> 1604K
代理商： PIC12CR509A
1999 Microchip Technology Inc.
DS40139E-page 81
PIC12C5XX
13.2
DC CHARACTERISTICS:
PIC12LC508A/509A (Commercial, Industrial)
PIC12LCE518/519 (Commercial, Industrial)
PIC12LCR509A (Commercial, Industrial)
DC Characteristics
Power Supply Pins
Standard Operating Conditions (unless otherwise specified)
Operating Temperature
0
°
C
≤
T
A
≤
+70
°
C (commercial)
–40
°
C
≤
T
A
≤
+85
°
C (industrial)
Parm
No.
Characteristic
Sym
Min Typ
(1)
Max
Units
Conditions
D001
Supply Voltage
V
DD
2.5
5.5
V
F
OSC
= DC to 4 MHz (Commercial/
Industrial)
D002
RAM Data Retention
Voltage
(2)
V
DR
1.5*
V
Device in SLEEP mode
D003
V
DD
Start Voltage to ensure
Power-on Reset
V
DD
Rise Rate to ensure
Power-on Reset
V
POR
V
SS
V
See section on Power-on Reset for details
D004
S
VDD
0.05*
V/ms
See section on Power-on Reset for details
D010
D010C
D010A
Supply Current
(3)
I
DD
—
—
—
—
0.4
0.4
15
15
0.8
0.8
23
31
mA
mA
μ
A
μ
A
XT and EXTRC options (Note 4)
F
OSC
= 4 MHz, V
DD
= 2.5V
INTRC Option
F
OSC
= 4 MHz, V
DD
= 2.5V
LP O
PTION
, Commercial Temperature
F
OSC
= 32 kHz, V
DD
= 2.5V, WDT disabled
LP O
PTION
, Industrial Temperature
F
OSC
= 32 kHz, V
DD
= 2.5V, WDT disabled
D020
D021
D021B
Power-Down Current
(5)
I
PD
—
—
0.2
0.2
3
4
μ
A
μ
A
mA
mA
V
DD
= 2.5V, Commercial
V
DD
= 2.5V, Industrial
I
WDT
—
2.0
2.0
4
5
V
DD
= 2.5V, Commercial
V
DD
= 2.5V, Industrial
* These parameters are characterized but not tested.
Note 1: Data in the Typical (“Typ”) column is based on characterization results at 25
°
C. This data is for design
guidance only and is not tested.
2: This is the limit to which V
DD
can be lowered in SLEEP mode without losing RAM data.
3: The supply current is mainly a function of the operating voltage and frequency. Other factors such as
bus loading, oscillator type, bus rate, internal code execution pattern, and temperature also have an
impact on the current consumption.
a) The test conditions for all I
DD
measurements in active operation mode are:
OSC1 = external square wave, from rail-to-rail; all I/O pins tristated, pulled to
V
ss
, T0CKI = V
DD
, MCLR = V
DD
; WDT enabled/disabled as specified.
b) For standby current measurements, the conditions are the same, except that
the device is in SLEEP mode.
4: Does not include current through Rext. The current through the resistor can be estimated by the
formula: I
R
= V
DD
/2Rext (mA) with Rext in kOhm.
5: The power down current in SLEEP mode does not depend on the oscillator type. Power down current
is measured with the part in SLEEP mode, with all I/O pins in hi-impedance state and tied to V
DD
or
V
SS
.
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