參數(shù)資料
型號： PHX10N40E
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： Circular Connector; Body Material:Aluminum Alloy; Series:KPT00; No. of Contacts:16; Connector Shell Size:20; Connecting Termination:Solder; Circular Shell Style:Wall Mount Receptacle; Circular Contact Gender:Pin RoHS Compliant: No
中文描述： 5.3 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
封裝： FULL PACK-3
文件頁數(shù)： 2/8頁
文件大?。?/td> 74K
代理商： PHX10N40E
Philips Semiconductors
Product specification
PowerMOS transistors
Avalanche energy rated
PHX10N40E
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
V
isol
R.M.S. isolation voltage from all
three terminals to external
heatsink
C
isol
Capacitance from T2 to external f = 1 MHz
heatsink
CONDITIONS
f = 50-60 Hz; sinusoidal
waveform;
R.H.
≤
65% ; clean and dustfree
MIN.
-
TYP.
MAX.
2500
UNIT
V
-
10
-
pF
THERMAL RESISTANCES
SYMBOL PARAMETER
R
th j-hs
Thermal resistance junction
to heatsink
R
th j-a
Thermal resistance junction
to ambient
CONDITIONS
with heatsink compound
MIN.
-
TYP. MAX. UNIT
-
3.4
K/W
-
55
-
K/W
ELECTRICAL CHARACTERISTICS
T
j
= 25 C unless otherwise specified
SYMBOL PARAMETER
V
(BR)DSS
Drain-source breakdown
voltage
V
(BR)DSS
/ Drain-source breakdown
T
j
voltage temperature
coefficient
R
DS(ON)
Drain-source on resistance
V
GS(TO)
Gate threshold voltage
g
fs
Forward transconductance
I
DSS
Drain-source leakage current V
DS
= 400 V; V
GS
= 0 V
CONDITIONS
V
GS
= 0 V; I
D
= 0.25 mA
MIN.
400
TYP. MAX. UNIT
-
-
V
V
DS
= V
GS
; I
D
= 0.25 mA
-
0.1
-
%/K
V
GS
= 10 V; I
= 5.3 A
V
DS
= V
; I
D
= 0.25 mA
V
DS
= 30 V; I
= 5.3 A
-
0.42
3.0
6
1
30
10
90
7
49
13
65
108
70
4.5
7.5
0.55
4.0
-
25
250
200
110
9
60
-
-
-
-
-
-
V
S
μ
A
μ
A
nA
nC
nC
nC
ns
ns
ns
ns
nH
nH
2.0
3.5
-
-
-
-
-
-
-
-
-
-
-
-
V
DS
= 320 V; V
GS
= 0 V; T
j
= 125 C
I
GSS
Q
g(tot)
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
d
L
s
Gate-source leakage current V
GS
=
±
30 V; V
DS
= 0 V
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Internal drain inductance
Internal source inductance
I
D
= 10.6 A; V
DD
= 320 V; V
GS
= 10 V
V
DD
= 200 V; R
D
= 18
;
R
G
= 9.1
Measured from drain lead to centre of die
Measured from source lead to source
bond pad
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Feedback capacitance
-
-
-
1080
190
110
-
-
-
pF
pF
pF
December 1998
2
Rev 1.200
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