參數(shù)資料
型號(hào): PHP9N60E
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: PowerMOS transistors Avalanche energy rated
中文描述: 8.7 A, 600 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁數(shù): 5/7頁
文件大小: 41K
代理商: PHP9N60E
Philips Semiconductors
Preliminary specification
PowerMOS transistors
Avalanche energy rated
PHP9N60E, PHB9N60E, PHW9N60E
MECHANICAL DATA
Dimensions in mm
Net Mass: 1.4 g
Fig.2. SOT404 : centre pin connected to mounting base.
MOUNTING INSTRUCTIONS
Dimensions in mm
Fig.3. SOT404 : soldering pattern for surface mounting
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.
2. Epoxy meets UL94 V0 at 1/8".
11 max
4.5 max
1.4 max
10.3 max
0.5
15.4
2.5
0.85 max
(x2)
2.54 (x2)
17.5
11.5
9.0
5.08
3.8
2.0
January 1998
5
Rev 1.000
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