參數(shù)資料
型號： PHP52N06T
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： N-channel enhancement mode field-effect transistor
中文描述： 52 A, 60 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： PLASTIC, SC-46, 3 PIN
文件頁數(shù)： 6/12頁
文件大?。?/td> 104K
代理商： PHP52N06T
Philips Semiconductors
PHP52N06T
N-channel enhancement mode field-effect transistor
Product data
Rev. 01 — 9 January 2002
6 of 12
9397 750 09121
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
T
j
= 25
°
C; t
p
= 300
μ
s
Fig 5.
Output characteristics: drain current as a
function of drain-source voltage; typical values.
T
j
= 25
°
C and 175
°
C; V
DS
>
I
D
×
R
DSon
Fig 6.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
T
j
= 25
°
C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
03ag59
0
20
40
60
0
0.4
0.8
1.2
1.6
2
V
DS
(V)
I
D
(A)
8 V
T
j
= 25 oC
V
GS
= 4.5 V
10 V
5.5 V
5 V
6 V
7 V
6.5 V
03ag61
0
20
40
60
0
2
4
6
8
V
GS
(V)
I
D
(A)
V
DS
> I
D
x R
DSon
T
j
= 25 oC
175 oC
03ag68
0
0.005
0.01
0.015
0.02
0
20
40
60
80
I
D
(A)
R
DSon
(
)
T
j
= 25 oC
10 V
7 V
V
GS
= 6 V
03aa28
0
0.6
1.2
1.8
2.4
-60
0
60
120
180
T
j
(
o
C)
a
a
R
DSon 25 C
°
)
----------------------------
=
相關(guān)PDF資料
PDF描述
PHP54N06T N-channel enhancement mode field-effect transistor
PHP55N03LTA N-channel enhancement mode field-effect transistor
PHB55N03LTA N-channel enhancement mode field-effect transistor
PHD55N03LTA N-channel enhancement mode field-effect transistor
PHP55N03T TrenchMOS transistor Standard Level FET(TrenchMOS 晶體管標準電平場效應(yīng)管)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PHP52N06T,127 功能描述:MOSFET RAIL MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PHP54N06T 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PHP54N06T,127 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PHP55N03LT 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel TrenchMOS transistor Logic level FET
PHP55N03LTA 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel enhancement mode field-effect transistor
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*