參數(shù)資料
型號： PHP52N06T
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： N-channel enhancement mode field-effect transistor
中文描述： 52 A, 60 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： PLASTIC, SC-46, 3 PIN
文件頁數(shù)： 5/12頁
文件大小： 104K
代理商： PHP52N06T
Philips Semiconductors
PHP52N06T
N-channel enhancement mode field-effect transistor
Product data
Rev. 01 — 9 January 2002
5 of 12
9397 750 09121
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
8.
Characteristics
Table 5:
T
j
= 25
°
C unless otherwise specified
Symbol Parameter
Static characteristics
V
(BR)DSS
drain-source breakdown voltage
Characteristics
Conditions
Min
Typ
Max
Unit
I
D
= 0.25 mA; V
GS
= 0 V
T
j
= 25
°
C
T
j
=
55
°
C
I
D
= 1 mA; V
DS
= V
GS
;
Figure 9
T
j
= 25
°
C
T
j
= 175
°
C
T
j
=
55
°
C
V
DS
= 55 V; V
GS
= 0 V
T
j
= 25
°
C
T
j
= 175
°
C
V
GS
=
±
20 V; V
DS
= 0 V
V
GS
= 10 V; I
D
= 25 A;
Figure 7
and
8
T
j
= 25
°
C
T
j
= 175
°
C
60
55
-
-
-
-
V
V
V
GS(th)
gate-source threshold voltage
2
1
-
3
-
-
4
-
4.4
V
V
V
I
DSS
drain-source leakage current
-
-
-
0.05
-
2
10
500
100
μ
A
μ
A
nA
I
GSS
R
DSon
gate-source leakage current
drain-source on-state resistance
-
-
17
-
22
44
m
m
Dynamic characteristics
Q
g(tot)
total gate charge
Q
gs
gate-source charge
Q
gd
gate-drain (Miller) charge
C
iss
input capacitance
C
oss
output capacitance
C
rss
reverse transfer capacitance
t
d(on)
turn-on delay time
t
r
rise time
t
d(off)
turn-off delay time
t
f
fall time
Source-drain diode
V
SD
source-drain (diode forward) voltage I
S
= 20 A; V
GS
= 0 V;
Figure 12
t
rr
reverse recovery time
Q
r
recovered charge
V
DD
= 44 V; I
D
= 40 A; V
GS
= 10 V;
Figure 13
-
-
-
-
-
-
-
-
-
-
36
8.4
11.5
1200 1592 pF
290
356
179
240
15
-
74
-
70
-
40
-
-
-
-
nC
nC
nC
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz;
Figure 11
pF
pF
ns
ns
ns
ns
V
DD
= 30 V; R
L
= 1.2
;
V
GS
= 10 V; R
G
= 10
;
-
-
-
0.85
45
110
1.2
-
-
V
ns
nC
I
S
= 20 A; dI
S
/dt =
100 A/
μ
s
V
GS
=
10 V; V
DS
= 30 V
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