參數(shù)資料
型號(hào)： PHP52N06T
廠商： NXP SEMICONDUCTORS
元件分類(lèi)： JFETs
英文描述： N-channel enhancement mode field-effect transistor
中文描述： 52 A, 60 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： PLASTIC, SC-46, 3 PIN
文件頁(yè)數(shù)： 2/12頁(yè)
文件大?。?/td> 104K
代理商： PHP52N06T
Philips Semiconductors
PHP52N06T
N-channel enhancement mode field-effect transistor
Product data
Rev. 01 — 9 January 2002
2 of 12
9397 750 09121
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
5.
Quick reference data
6.
Limiting values
Table 2:
Symbol Parameter
V
DS
drain-source voltage (DC)
I
D
drain current (DC)
P
tot
total power dissipation
T
j
junction temperature
R
DSon
drain-source on-state resistance
Quick reference data
Conditions
Typ
-
-
-
-
Max
60
52
118
175
Unit
V
A
W
°
C
T
mb
= 25
°
C; V
GS
= 10 V
T
mb
= 25
°
C
V
GS
= 10 V; I
D
= 25 A
T
j
= 25
°
C
T
j
= 175
°
C
17
-
22
44
m
m
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
V
DS
drain-source voltage (DC)
V
DGR
drain-gate voltage (DC)
V
GS
gate-source voltage (DC)
I
D
drain current (DC)
Limiting values
Conditions
Min
-
-
-
-
-
-
-
55
55
Max
60
60
±
20
52
37
208
120
+175
+175
Unit
V
V
V
A
A
A
W
°
C
°
C
R
GS
= 20 k
T
mb
= 25
°
C; V
GS
= 10 V;
Figure 2
and
3
T
mb
= 100
°
C; V
GS
= 10 V;
Figure 2
T
mb
= 25
°
C; pulsed; t
p
≤
10
μ
s;
Figure 3
T
mb
= 25
°
C;
Figure 1
I
DM
P
tot
T
stg
T
j
Source-drain diode
I
S
source (diode forward) current (DC)
I
SM
peak source (diode forward) current T
mb
= 25
°
C; pulsed; t
p
≤
10
μ
s
Avalanche ruggedness
E
DS(AL)
non-repetitive avalanche energy
peak drain current
total power dissipation
storage temperature
operating junction temperature
T
mb
= 25
°
C
-
-
52
208
A
A
unclamped inductive load; I
D
= 48 A;
V
DS
≤
55 V; V
GS
= 10 V; R
GS
= 50
; starting
T
mb
= 25
°
C
-
115
mJ
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