參數(shù)資料
型號(hào): PHP36N06E
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: PowerMOS transistor
中文描述: 41 A, 60 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁(yè)數(shù): 5/7頁(yè)
文件大?。?/td> 51K
代理商: PHP36N06E
Philips Semiconductors
Product specification
PowerMOS transistor
PHP36N06E
Fig.13. Typical turn-on gate-charge characteristics.
V
GS
= f(Q
G
); conditions: I
D
= 41 A; parameter V
DS
Fig.14. Typical reverse diode current.
I
F
= f(V
SDS
); conditions: V
GS
= 0 V; parameter T
j
Fig.15. Normalised avalanche energy rating.
W
DSS
% = f(T
mb
); conditions: I
D
= 41 A
Fig.16. Avalanche energy test circuit.
W
DSS
=
0.5
LI
D
0
10
20
30
40
0
2
4
6
8
10
12
BUK474-60H
QG / nC
VGS / V
48
VDS / V = 12
20
40
60
80
Tmb / C
100
120
140
120
110
100
90
80
70
60
50
40
30
20
10
0
WDSS%
0
0.5
1
1.5
2
0
10
20
30
40
50
60
70
80
BUK474-60H
VSDS / V
IF / A
Tj / C =
-40
25
150
L
T.U.T.
VDD
RGS
R 01
shunt
VDS
-ID/100
+
-
VGS
0
2
BV
DSS
/(
BV
DSS
V
DD
)
August 1996
5
Rev 1.000
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