參數(shù)資料
型號(hào): PHP33N10
廠商: NXP SEMICONDUCTORS
元件分類(lèi): JFETs
英文描述: PowerMOS transistor(功率MOS晶體管)
中文描述: 34 A, 100 V, 0.057 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: PLASTIC, TO-220AB, 3 PIN
文件頁(yè)數(shù): 6/7頁(yè)
文件大?。?/td> 73K
代理商: PHP33N10
Philips Semiconductors
Product specification
PowerMOS transistor
PHP33N10
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
Fig.18. SOT78 (TO220AB); pin 2 connected to mounting base.
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.
2. Refer to mounting instructions for SOT78 (TO220) envelopes.
3. Epoxy meets UL94 V0 at 1/8".
10,3
max
3,7
2,8
3,0
3,0 max
not tinned
1,3
max
(2x)
1 2 3
2,4
0,6
4,5
max
5,9
min
15,8
max
1,3
2,54 2,54
0,9 max (3x)
13,5
min
April 1998
6
Rev 1.100
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PHP33N10/B 制造商:PHILIPS 制造商全稱(chēng):NXP Semiconductors 功能描述:TRANSISTOR UNIVERSAL MOSFET SOT
PHP33NQ20T 功能描述:MOSFET TRENCHMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PHP33NQ20T,127 功能描述:MOSFET TRENCHMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PHP34NQ10T 制造商:PHILIPS 制造商全稱(chēng):NXP Semiconductors 功能描述:N-channel TrenchMOS transistor
PHP34NQ11T 制造商:PHILIPS 制造商全稱(chēng):NXP Semiconductors 功能描述:N-channel TrenchMOS⑩ standard level FET