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參數(shù)資料
| 型號： | PHP37N06 |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | TrenchMOS transistor Logic level FET |
| 中文描述： | TrenchMOS晶體管邏輯電平場效應管 |
| 文件頁數(shù)： | 1/10頁 |
| 文件大小： | 79K |
| 代理商： | PHP37N06 |
Philips Semiconductors
Product specification
TrenchMOS
transistor
Logic level FET
PHP37N06LT, PHB37N06LT, PHD37N06LT
FEATURES
SYMBOL
QUICK REFERENCE DATA
V
DSS
= 55 V
’Trench’
technology
Very low on-state resistance
Fast switching
Stable off-state characteristics
High thermal cycling performance
Low thermal resistance
I
D
= 37 A
R
DS(ON)
≤
35 m
(V
GS
= 5 V)
R
DS(ON)
≤
32 m
(V
GS
= 10 V)
GENERAL DESCRIPTION
N-channelenhancement mode,logic level, field-effectpower transistor in aplastic envelopeusing ’
trench
’technology.
Thedevice has very low on-state resistance. Itis intended for use in dcto dc converters and general purpose switching
applications.
The PHP37N06LT is supplied in the SOT78 (TO220AB) conventional leaded package.
The PHB37N06LT is supplied in the SOT404 surface mounting package.
The PHD37N06LT is supplied in the SOT428 surface mounting package.
PINNING
SOT78 (TO220AB)
SOT404
SOT428
PIN
DESCRIPTION
1
gate
2
drain
1
3
source
tab
drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
V
DSS
Drain-source voltage
V
DGR
Drain-gate voltage
V
GS
Gate-source voltage
I
D
Continuous drain current
CONDITIONS
T
j
= 25 C to 175C
T
j
= 25 C to 175C; R
GS
= 20 k
MIN.
-
-
-
-
-
-
-
- 55
MAX.
55
55
±
13
37
26
148
100
175
UNIT
V
V
V
A
A
A
W
C
T
mb
= 25 C
T
mb
= 100 C
T
mb
= 25 C
T
mb
= 25 C
I
DM
P
D
T
j
, T
stg
Pulsed drain current
Total power dissipation
Operating junction and
storage temperature
d
g
s
1
3
tab
1
3
tab
2
1 2 3
tab
1
It is not possible to make connection to pin 2 of the SOT428 or SOT404 packages.
September 1998
1
Rev 1.400
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PHB37N06LT | TrenchMOS transistor Logic level FET |
| PHD37N06LT | TrenchMOS transistor Logic level FET |
| PHP37N06T | TrenchMOS transistor Standard Level FET(TrenchMOS 晶體管標準電平場效應管) |
| PHP3N40E | PowerMOS transistors Avalanche energy rated |
| PHB3N40E | PowerMOS transistors Avalanche energy rated |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PHP37N06LT | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:TrenchMOS transistor Logic level FET |
| PHP37N06T | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:TrenchMOS transistor Standard level FET |
| PHP3N20E | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor |
| PHP3N20L | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level FET |
| PHP3N40E | 制造商:NXP Semiconductors 功能描述:MOSFET N TO-220AB |
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