參數(shù)資料
型號(hào)： PHP32N06LT
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： N-channel enhancement mode field effect transistor
中文描述： 34 A, 60 V, 0.043 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： PLASTIC, SC-46, 3 PIN
文件頁數(shù)： 5/13頁
文件大小： 274K
代理商： PHP32N06LT
Philips Semiconductors
PHP32N06LT; PHB32N06LT
N-channel enhancement mode field effect transistor
Product data
Rev. 01 — 06 November 2001
5 of 13
9397 750 09024
Koninklijke Philips Electronics N.V. 2001. All rights reserved.
8.
Characteristics
Table 5:
T
j
= 25
°
C unless otherwise specified
Symbol Parameter
Static characteristics
V
(BR)DSS
drain-source breakdown voltage
Characteristics
Conditions
Min
Typ
Max
Unit
I
D
= 0.25 mA; V
GS
= 0 V
T
j
= 25
°
C
T
j
=
55
°
C
I
D
= 1 mA; V
DS
= V
GS
;
Figure 9
T
j
= 25
°
C
T
j
= 175
°
C
T
j
=
55
°
C
V
DS
= 60 V; V
GS
= 0 V
T
j
= 25
°
C
T
j
= 175
°
C
V
GS
=
±
10 V; V
DS
= 0 V
V
GS
= 5 V; I
D
= 20 A;
Figure 7
and
8
T
j
= 25
°
C
T
j
= 175
°
C
V
GS
= 4.5 V; I
D
= 20 A;
V
GS
= 10 V; I
D
= 20 A;
60
55
-
-
-
-
V
V
V
GS(th)
gate-source threshold voltage
1
0.5
-
1.5
-
-
2
-
2.3
V
V
V
I
DSS
drain-source leakage current
-
-
-
0.05
-
2
10
500
100
μ
A
μ
A
nA
I
GSS
R
DSon
gate-source leakage current
drain-source on-state resistance
-
-
-
-
30
-
31.5
26
40
84
43
37
m
m
m
m
Dynamic characteristics
Q
g(tot)
total gate charge
Q
gs
gate-source charge
Q
gd
gate-drain (Miller) charge
C
iss
input capacitance
C
oss
output capacitance
C
rss
reverse transfer capacitance
t
d(on)
turn-on delay time
t
r
rise time
t
d(off)
turn-off delay time
t
f
fall time
I
D
= 20 A; V
DD
= 44 V; V
GS
= 5 V;
Figure 13
-
-
-
-
-
-
-
-
-
-
17
3
8.5
920
160
100
14
120
45
55
-
-
-
1280 pF
200
155
-
-
-
-
nC
nC
nC
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz;
Figure 11
pF
pF
ns
ns
ns
ns
V
DS
= 30 V; R
L
= 1.2
; V
GS
= 5 V; R
G
= 10
;
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PHP32N06LT,127 功能描述:MOSFET RAIL MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PHP33N10 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor
PHP33N10/B 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:TRANSISTOR UNIVERSAL MOSFET SOT
PHP33NQ20T 功能描述:MOSFET TRENCHMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PHP33NQ20T,127 功能描述:MOSFET TRENCHMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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