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參數(shù)資料
| 型號： | PHP3055L |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | PowerMOS transistor Logic level FET |
| 中文描述： | 12 A, 60 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, TO-220AB, 3 PIN |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 52K |
| 代理商： | PHP3055L |
Philips Semiconductors
Product specification
PowerMOS transistor
Logic level FET
PHP3055L
Fig.1. Normalised power dissipation.
PD% = 100
P
D
/P
D 25 C
= f(T
mb
)
Fig.2. Normalised continuous drain current.
ID% = 100
I
D
/I
D 25 C
= f(T
mb
); conditions: V
GS
≥
10 V
Fig.3. Safe operating area. T
= 25 C
I
D
& I
DM
= f(V
DS
); I
DM
single pulse; parameter t
p
Fig.4. Transient thermal impedance.
Z
th j-mb
= f(t); parameter D = t
p
/T
Fig.5. Typical output characteristics
I
D
= f(V
DS
); parameter V
GS
Fig.6. Typical on-state resistance
R
DS(ON)
= f(I
D
); parameter V
GS
0
20
40
60
80
Tmb / C
100
120
140
160
180
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
0
0.5
0.2
0.1
0.05
0.02
D =
t
p
t
p
T
T
P
D
t
1us
10us
1ms
0.1s
10s
tp, pulse widtht (s)
Zth j-mb, Transient Thermal Impedance (K/W)
10
1
0.1
0.01
1s
10ms
100us
0
20
40
60
80
Tmb / C
100
120
140
160
180
ID%
Normalised Current Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
0
5
10
15
20
25
30
0
5
10
15
PHP3055L
VDS, Drain-Source voltage (Volts)
ID, Drain current (Amps)
Tj = 25 C
VGS = 3 V
3.5 V
4 V
4.5 V
5 V
10 V
1
10
100
1000
0.1
1
10
100
DC
PHP3055E
VDS, Drain-source voltage (Volts)
ID, Drain current (Amps)
10 ms
100 ms
tp = 10 us
1 ms
100 us
RDSON =VDSID
0
5
10
15
20
0
0.1
0.2
0.3
0.4
PHP3055L
ID, Drain current (Amps)
RDS(on), Drain-Source on resistance (Ohms)
4.5 V
VGS = 15 V
Tj = 25 C
5 V
5.5 V
10 V
April 1998
3
Rev 1.000
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PHP3055L/B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR MOSFET TO-220 |
| PHP30NQ15T | 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PHP30NQ15T,127 | 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PHP32N06L | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel enhancement mode field effect transistor |
| PHP32N06LT | 功能描述:MOSFET RAIL MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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