參數(shù)資料
型號(hào)： PHP3055
廠商： NXP Semiconductors N.V.
英文描述： N-channel TrenchMOS transistor
中文描述： N溝道TrenchMOS晶體管
文件頁(yè)數(shù)： 1/10頁(yè)
文件大?。?/td> 103K
代理商： PHP3055
Philips Semiconductors
Product specification
N-channel TrenchMOS
transistor
PHP3055E, PHD3055E
FEATURES
SYMBOL
QUICK REFERENCE DATA
’Trench’
technology
Low on-state resistance
Fast switching
V
DSS
= 55 V
I
D
= 10.3 A
R
DS(ON)
≤
150 m
(V
GS
= 10 V)
GENERAL DESCRIPTION
N-channel enhancement mode, field-effect power transistor in a plastic envelope using ’
trench
’ technology.
Applications:-
d.c. to d.c. converters
switched mode power supplies
The PHP3055E is supplied in the SOT78 (TO220AB) conventional leaded package.
The PHD3055E is supplied in the SOT428 (DPAK) surface mounting package.
PINNING
SOT78 (TO220AB)
SOT428 (DPAK)
PIN
DESCRIPTION
1
gate
2
drain
1
3
source
tab
drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
V
DSS
Drain-source voltage
V
DGR
Drain-gate voltage
V
GS
Gate-source voltage
I
D
Continuous drain current
CONDITIONS
T
j
= 25 C to 175C
T
j
= 25 C to 175C; R
GS
= 20 k
MIN.
-
-
-
-
-
-
-
- 55
MAX.
55
55
±
20
10.3
7.3
41
33
175
UNIT
V
V
V
A
A
A
W
C
T
mb
= 25 C
T
mb
= 100 C
T
mb
= 25 C
T
mb
= 25 C
I
DM
P
D
T
j
, T
stg
Pulsed drain current
Total power dissipation
Operating junction and
storage temperature
d
g
s
1
2
3
tab
1 2 3
tab
1
It is not possible to make connection to pin:2 of the SOT428 package
August 1999
1
Rev 1.200
相關(guān)PDF資料
PDF描述
PHP3055E N-channel TrenchMOS transistor
PHP32N06L N-channel enhancement mode field effect transistor
PHP32N06LT N-channel enhancement mode field effect transistor
PHP36N06E PowerMOS transistor
PHP3N20E PowerMOS transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PHP3055E 功能描述:MOSFET RAIL PWRMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PHP3055E,127 功能描述:MOSFET RAIL PWRMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PHP3055L 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level FET
PHP3055L/B 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR MOSFET TO-220
PHP30NQ15T 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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