參數(shù)資料
型號(hào)： PHP2N60
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： PowerMOS transistor
中文描述： 2.8 A, 600 V, 4.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： PLASTIC, TO-220AB, 3 PIN
文件頁數(shù)： 1/7頁
文件大?。?/td> 51K
代理商： PHP2N60
Philips Semiconductors
--------------------------------------------------------------------------------------------------------------
PowerMOS transistor
Product specification
PHP2N60
----------------------------------------------------------------------------------------------------------------------------------------------------------
GENERAL DESCRIPTION
QUICK REFERENCE DATA
N-channel
field-effect power transistor in a
plastic
envelope
avalanche energy capability, stable
off-state
characteristics,
switching and high thermal cycling
performance
with
resistance.
Intended
Switched
Mode
(SMPS), motor control circuits and
general
purpose
applications.
enhancement
mode
SYMBOL
---------------- ------------------------------------------------------- ----------- -----------
V
DS
Drain-source voltage
I
D
Drain current (DC)
P
tot
Total power dissipation
R
DS(ON)
Drain-source on-state resistance
PARAMETER
MAX.
UNIT
featuring
high
600
2.8
83
4.4
V
A
W
fast
low
for
thermal
use
Supplies
in
Power
switching
PINNING - TO220AB
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
gate
2
drain
3
source
tab
drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
I
D
Continuous drain current
CONDITIONS
T
mb
= 25 C; V
GS
= 10 V
T
mb
= 100 C; V
GS
= 10 V
T
mb
= 25 C
T
mb
= 25 C
T
mb
> 25 C
MIN.
-
-
-
-
-
-
-
MAX.
2.8
1.8
11
83
0.67
±
30
84
UNIT
A
A
A
W
W/K
V
mJ
I
DM
P
D
P
D
/
T
mb
Linear derating factor
V
GS
Gate-source voltage
E
AS
Single pulse avalanche
energy
I
AS
Peak avalanche current
Pulsed drain current
Total dissipation
V
DD
≤
50 V; starting T
j
= 25C; R
GS
= 50
;
V
GS
= 10 V
V
DD
≤
50 V; starting T
j
= 25C; R
GS
= 50
;
V
GS
= 10 V
-
2.2
A
T
j
, T
stg
Operating junction and
storage temperature range
- 55
150
C
THERMAL RESISTANCES
SYMBOL
R
th j-mb
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
MIN.
-
TYP.
-
MAX.
1.5
UNIT
K/W
R
th j-a
-
60
-
K/W
1 2 3
tab
d
g
s
April 1997
1
Rev 1.001
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PHP3055E,127 功能描述:MOSFET RAIL PWRMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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