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參數(shù)資料
| 型號： | PHP24N03T |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | TrenchMOS transistor Standard level FET |
| 中文描述： | 24 A, 30 V, 0.056 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, TO-220AB, 3 PIN |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 57K |
| 代理商： | PHP24N03T |
Philips Semiconductors
Product specification
TrenchMOS
transistor
Standard level FET
PHP24N03T
Fig.5. Typical output characteristics, T
j
= 25 C
I
D
= f(V
DS
); parameter V
GS
Fig.6. Typical on-state resistance, T
j
= 25 C
R
DS(ON)
= f(I
D
); parameter V
GS
Fig.7. Typical transfer characteristics.
I
D
= f(V
GS
); parameter T
j
Fig.8. Typical transconductance, T
j
= 25 C
g
fs
= f(I
D
)
Fig.9. Normalised drain-source on-state resistance.
a = R
DS(ON)
/R
DS(ON)25 C
= f(T
j
); I
D
= 12 A; V
GS
= 10 V
Fig.10. Gate threshold voltage.
V
GS(TO)
= f(T
j
); conditions: I
D
= 1 mA; V
DS
= V
GS
0
5
10
15
20
25
30
0
5
10
15
20
VGS = 4 V
4.5 V
5 V
5.5 V
6 V
6.5 V
PHP24N03T
VDS, Drain-Source voltage (Volts)
ID, Drain current (Amps)
10 V
20 V
Tj = 25 C
0
5
10
15
20
0
2
4
6
8
10
PHP24N03T
Drain current, ID (A)
Transconductance, gfs (S)
VDS = 30 V
175 C
Tj = 25 C
0
5
10
15
20
0
0.05
0.1
0.15
0.2
ID, Drain current (Amps)
RDS(on), Drain-Source on resistance (Ohms)
VGS = 4 V
4.5 V
5 V
5.5 V
10 V
20 V
Tj = 25 C
PHP24N03T
0
0
100
200
0.5
1
1.5
2
30V TrenchMOS
Tj / C
a
150
50
-50
0
2
4
6
8
10
0
5
10
15
PHP24N03T
Gate-source voltage, VGS (V)
Drain current, ID (A)
VDS = 30 V
Tj = 25 C
175 C
BUK759-60
0
-50
0
50
100
150
200
1
2
3
4
5
Tj / C
VGS(TO) / V
max.
typ.
min.
September 1997
4
Rev 1.100
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