- 您現(xiàn)在的位置：買賣IC網 > PDF目錄382392 > PHP24N03T (NXP SEMICONDUCTORS) TrenchMOS transistor Standard level FET PDF資料下載
參數(shù)資料
| 型號： | PHP24N03T |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | TrenchMOS transistor Standard level FET |
| 中文描述： | 24 A, 30 V, 0.056 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, TO-220AB, 3 PIN |
| 文件頁數(shù)： | 1/7頁 |
| 文件大小： | 57K |
| 代理商： | PHP24N03T |
Philips Semiconductors
Product specification
TrenchMOS
transistor
Standard level FET
PHP24N03T
GENERAL DESCRIPTION
QUICK REFERENCE DATA
N-channel
standard level field-effect power
transistor in a plastic envelope using
’
trench
’ technology.
featuresverylow on-state resistance
and has integral zener diodes giving
ESD protection up to 2kV. It is
intended
for
use
converters and
switching applications.
enhancement
mode
SYMBOL
PARAMETER
MAX.
UNIT
V
DS
I
D
P
tot
T
j
R
DS(ON)
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance
30
24
60
175
56
V
A
W
C
m
The
device
in
DC-DC
V
GS
= 10 V
general purpose
PINNING - TO220AB
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
gate
2
drain
3
source
tab
drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
V
DS
V
DGR
±
V
GS
I
D
I
D
I
DM
P
tot
T
stg
, T
j
PARAMETER
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage & operating temperature
CONDITIONS
-
R
GS
= 20 k
-
T
mb
= 25 C
T
mb
= 100 C
T
mb
= 25 C
T
mb
= 25 C
-
MIN.
-
-
-
-
-
-
-
- 55
MAX.
30
30
20
24
20
96
60
175
UNIT
V
V
V
A
A
A
W
C
THERMAL RESISTANCES
SYMBOL
R
th j-mb
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
-
TYP.
-
MAX.
2.5
UNIT
K/W
R
th j-a
in free air
60
-
K/W
ESD LIMITING VALUE
SYMBOL
V
C
PARAMETER
Electrostatic discharge capacitor
voltage, all pins
CONDITIONS
Human body model
(100 pF, 1.5 k
)
MIN.
-
MAX.
2
UNIT
kV
d
g
s
1 2 3
tab
September 1997
1
Rev 1.100
相關PDF資料 |
PDF描述 |
|---|---|
| PHP26N10E | PowerMOS transistor |
| PHP27NQ10T | N-channel TrenchMOS transistor |
| PHD27NQ10T | N-channel TrenchMOS transistor |
| PHP2N40E | PowerMOS transistor |
| PHP2N40 | PowerMOS transistor |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| PHP250 | 制造商:ProTek Devices 功能描述:Diode TVS Single Bi-Dir 354V 15KW 2-Pin 制造商:Microsemi Corporation 功能描述:TVS SGL BI-DIR 354V 15KW 2PIN CASE 11 - Bulk |
| PHP26N10E | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor |
| PHP275 | 制造商:PROTEC 制造商全稱:Protek Devices 功能描述:AC POWER BUS VOLTAGE SUPPRESSOR |
| PHP27NQ10T | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel TrenchMOS transistor |
| PHP27NQ11T | 功能描述:MOSFET TRENCHMOS (TM) FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復。