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參數(shù)資料
| 型號： | PHP222 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | Dual P-channel enhancement mode MOS transistor |
| 中文描述： | 1.93 A, 30 V, 0.22 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, MS-012AA |
| 封裝： | PLASTIC, SO-8 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 54K |
| 代理商： | PHP222 |
1998 Apr 01
3
Philips Semiconductors
Preliminary specification
Dual P-channel enhancement
mode MOS transistor
PHP222
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Notes
1.
2.
3.
4.
T
s
is the temperature at the soldering point of the drain lead.
Pulse width and duty cycle limited by maximum junction temperature.
Maximum permissible dissipation per MOS transistor. Both devices may be loaded up to 3.5 W at the same time.
Maximum permissible dissipation per MOS transistor. Device mounted on a printed-circuit board with an R
th a-tp
(ambient to tie-point) of 27.5 K/W.
Maximum permissible dissipation per MOS transistor. Device mounted on a printed-circuit board with an R
th a-tp
(ambient to tie-point) of 90 K/W.
Maximum permissible dissipation if only one MOS transistor dissipates. Device mounted on a printed-circuit board
with an R
th a-tp
(ambient to tie-point) of 90 K/W.
5.
6.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
UNIT
Per P-channel
V
DS
V
GSO
I
D
I
DM
P
tot
drain-source voltage (DC)
gate-source voltage (DC)
drain current (DC)
peak drain current
total power dissipation
55
55
30
±
8
3.2
12.8
3.5
2.63
1.14
1.56
+150
+150
V
V
A
A
W
W
W
W
°
C
°
C
open drain
T
s
= 80
°
C; note 1
note 2
T
s
= 80
°
C; note 3
T
amb
= 25
°
C; note 4
T
amb
= 25
°
C; note 5
T
amb
= 25
°
C; note 6
T
stg
T
j
storage temperature
operating junction temperature
Source-drain diode
I
S
I
SM
source current (DC)
peak pulsed source current
T
s
= 80
°
C
note 2
2.7
10.8
A
A
SYMBOL
PARAMETER
VALUE
UNIT
R
th j-s
thermal resistance from junction to soldering point
20
K/W
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| PHP222NQ04LT | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel TrenchMOSTM logic level FET |
| PHP222NQ04LT,127 | 功能描述:MOSFET TRENCHMOS (TM) FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PHP22-3,50 | 功能描述:可插拔接線端子 HorizHd 3.5mm ClEnd RoHS:否 制造商:Phoenix Contact 產(chǎn)品:Plugs 系列:PTS 端接類型:Spring Cage 位置/觸點數(shù)量:5 線規(guī)量程:26-14 節(jié)距:5 mm 電流額定值:10 A 電壓額定值:250 V 安裝風(fēng)格: 安裝角: 觸點電鍍: |
| PHP22-3,81 | 功能描述:可插拔接線端子 HorizHd 3.81mm ClEnd RoHS:否 制造商:Phoenix Contact 產(chǎn)品:Plugs 系列:PTS 端接類型:Spring Cage 位置/觸點數(shù)量:5 線規(guī)量程:26-14 節(jié)距:5 mm 電流額定值:10 A 電壓額定值:250 V 安裝風(fēng)格: 安裝角: 觸點電鍍: |
| PHP22-3.50 | 制造商:ALTECH CORP 功能描述:Conn;TermBlk;PCB;Header;SnglLvl;90DegAngl;Sldr;22Pole;3.5mmPitch;PHP-3.50Series |
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