參數(shù)資料
型號(hào): PHP20N06E
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: PowerMOS transistor
中文描述: 22 A, 60 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: PLASTIC PACKAGE-3
文件頁(yè)數(shù): 4/15頁(yè)
文件大小: 334K
代理商: PHP20N06E
Philips Semiconductors
PHP20N06T; PHB20N06T
N-channel TrenchMOS transistor
Product specification
Rev. 01 — 22 February 2001
4 of 15
9397 750 07894
Philips Electronics N.V. 2001. All rights reserved.
7.
Thermal characteristics
7.1 Transient thermal impedance
Table 4:
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from junction to ambient
Conditions
vertical in still air; SOT78 package
mounted on printed circuit board;
minimum footprint; SOT404
package
Figure 4
Value
60
50
Unit
K/W
K/W
R
th(j-mb)
thermal resistance from junction to mounting
base
2.4
K/W
Fig 4.
Transient thermal impedance from junction to mounting base as a function of pulse duration.
003aaa044
Single Pulse
0.2
0.1
0.05
0.02
10-2
10-1
1
10
10-6
10-5
10-4
10-3
10-2
10-1
1
tp (s)
Zth(j-mb)
(K/W)
δ
= 0.5
tp
tp
T
T
P
t
δ
=
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