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參數(shù)資料
| 型號(hào)： | PHP119NQ06T |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | N-channel TrenchMOS standard level FET |
| 中文描述： | 75 A, 55 V, 0.0071 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, SC-46, 3 PIN |
| 文件頁數(shù)： | 8/13頁 |
| 文件大?。?/td> | 94K |
| 代理商： | PHP119NQ06T |
Philips Semiconductors
PHP/PHB119NQ06T
N-channel TrenchMOS standard level FET
Product data
Rev. 01 — 05 May 2004
8 of 13
9397 750 13176
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
T
j
= 25
°
C and 175
°
C; V
GS
= 0 V
Fig 12. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
I
D
= 25 A; V
DD
= 14 V and 44 V
Fig 13. Gate-source voltage as a function of gate
charge; typical values.
03ap34
0
25
50
75
0
0.3
0.6
0.9
1.2
VSD (V)
IS
(A)
Tj = 25
°
C
175
°
C
VGS = 0 V
03ap36
0
2
4
6
8
10
0
20
40
60
QG (nC)
VGS
(V)
ID = 25 A
Tj
= 25
°
C
VDD = 44 V
14 V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PHP119NQ06T,127 | 功能描述:MOSFET TRENCHMOS (TM)FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PHP11N06LT | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel TrenchMOS transistor Logic level FET |
| PHP11N50E | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistors Avalanche energy rated |
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| PHP120H2 | 制造商:ProTek Devices 功能描述:Diode TVS Single Bi-Dir 170V 15KW 2-Pin |
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