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參數(shù)資料
| 型號： | PHP119NQ06T |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | N-channel TrenchMOS standard level FET |
| 中文描述： | 75 A, 55 V, 0.0071 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, SC-46, 3 PIN |
| 文件頁數(shù)： | 6/13頁 |
| 文件大小： | 94K |
| 代理商： | PHP119NQ06T |
Philips Semiconductors
PHP/PHB119NQ06T
N-channel TrenchMOS standard level FET
Product data
Rev. 01 — 05 May 2004
6 of 13
9397 750 13176
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
T
j
= 25
°
C
Output characteristics: drain current as a
function of drain-source voltage; typical values.
T
j
= 25
°
C and 175
°
C; V
DS
>
I
D
x R
DSon
Fig 6.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Fig 5.
T
j
= 25
°
C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
03ap31
0
80
160
240
0
1
2
3
4
VDS (V)
ID
(A)
Tj = 25
°
C
VGS = 5 V
10 V 9 V
7 V
6 V
8.5 V
8 V
03ap33
0
25
50
75
0
2
4
6
VGS (V)
ID
(A)
VDS > ID x RDSon
Tj = 175
°
C
25
°
C
03ap32
0
5
10
15
20
0
80
160
240
ID (A)
RDSon
(m
)
VGS = 7.5 V
Tj = 25
°
C
10 V
9 V
8.5 V
8 V
03ne89
0
0.5
1
1.5
2
-60
0
60
120
180
Tj (
°
C)
a
a
R
R
DSon 25 C
)
----------------------------
=
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| PHP119NQ06T,127 | 功能描述:MOSFET TRENCHMOS (TM)FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PHP11N06LT | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel TrenchMOS transistor Logic level FET |
| PHP11N50E | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistors Avalanche energy rated |
| PHP120 | 制造商:ProTek Devices 功能描述:Diode TVS Single Bi-Dir 170V 15KW 2-Pin 制造商:Microsemi Corporation 功能描述:TRANSIENT VOLTAGE SUPPRESSOR CASE-11 SD - Bulk |
| PHP120H2 | 制造商:ProTek Devices 功能描述:Diode TVS Single Bi-Dir 170V 15KW 2-Pin |
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