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參數(shù)資料
| 型號： | PHP108NQ03LT |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | TrenchMOS logic level FET |
| 中文描述： | 75 A, 25 V, 0.0075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, SC-46, 3 PIN |
| 文件頁數(shù)： | 6/14頁 |
| 文件大?。?/td> | 269K |
| 代理商： | PHP108NQ03LT |
Philips Semiconductors
PHP/PHB/PHD108NQ03LT
TrenchMOS logic level FET
Product data
Rev. 02 — 11 September 2002
6 of 14
9397 750 10159
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
T
j
= 25
°
C
Output characteristics: drain current as a
function of drain-source voltage; typical values.
T
j
= 25
°
C and 175
°
C; V
DS
>
I
D
×
R
DSon
Fig 6.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Fig 5.
T
j
= 25
°
C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain source on-state resistance
factor as a function of junction temperature.
003aaa192
0
10
20
30
40
0
0.5
1
1.5
2
VDS (V)
ID
(A)
2.4 V
2.2 V
3 V
2.8 V
2.6 V
10 V
5 V
4 V
3.5 V
003aaa193
0
10
20
30
40
1
2
3
4
VGS (V)
ID
(A)
VDS > ID x RDSon
Tj = 175
°
C
25
°
C
003aaa194
0
0.02
0.04
0.06
0.08
0.1
0
5
10
15
20
ID (A)
RDSon
(
)
VGS = 2.8 V
3.5 V
5 V
10 V
2.6 V
3 V
03aa27
0
0.5
1
1.5
2
-60
0
60
120
180
Tj (
°
C)
a
a
R
DSon 25
°
C
)
-----------------------------
=
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