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參數(shù)資料
| 型號： | PHN70308 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | N-channel enhancement mode TrenchMOS transistor array(N溝道增強型TrenchMOS晶體管陣列) |
| 中文描述： | 5000 mA, 25 V, 7 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MO-150AH |
| 封裝： | PLASTIC, SSOP-28 |
| 文件頁數(shù)： | 2/10頁 |
| 文件大小： | 172K |
| 代理商： | PHN70308 |
Philips Semiconductors
Product specification
N-channel enhancement mode
TrenchMOS transistor array
PHN70308
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
V
DS
V
DGR
V
GS
I
D
PARAMETER
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Peak drain current per device
(continuous operation)
CONDITIONS
T
j
= 25 C to 150C
R
GS
= 20 k
MIN.
-
-
-
MAX.
25
25
±
20
UNIT
V
V
V
T
= 50 C
1
spindle FETs;
δ
= 33.3%
Isolation FET (dc)
spindle FETs
isolation FET
T
= 50 C
spindle FETs;
δ
= 33.3%
isolation FET (dc)
T
= 50 C
spindle FETs;
δ
= 33.3%
isolation FET (dc)
-
-
-
-
5
5
A
A
A
A
I
DM
Peak current per device (pulse
peak value)
Power dissipation per device
2
20
20
P
tot
-
-
-
1.13
1.275
8
W
W
W
P
tot
Total power dissipation in normal
operation
2
T
stg
, T
j
Storage & operating temperature
- 55
150
C
THERMAL RESISTANCES
SYMBOL
R
th j-sp
PARAMETER
Thermal resistance junction to
solder point
Thermal resistance junction to
ambient
CONDITIONS
TYP.
20
43
MAX.
-
-
UNIT
K/W
K/W
isolation FET
spindle FET
R
th j-a
device soldered to FR4 board,
minimum footprint.
isolation FET
spindle FET
85
100
-
-
K/W
K/W
1
T
sp
is the temperature at the soldering point of the drain leads.
2
In normal operation, the isolation FET conducts continuously whilst each of the spindle FETs conducts for 33.3%
of the time. The dissipation in the isolation transistor is given by:-
P
isolation
=
I
2
xR
DS
(
ON
)(
isolationFET
)
The dissipation in each of the spindle transistors is given by:-
P
spindle
=
0.333
xI
2
xR
DS
(
ON
)(
spindleFET
)
The total dissipation under these conditions is given by:-
P
tot
=
P
isolation
+
6
xP
spindle
With the motor being driven at 5 A and assuming T
j
= 150C, the total dissipation is:-
P
tot
=
25
x
0.03
x
1.7
+
0.333
x
25
x
0.08
x
1.7
x
6
=
8
W
Switching losses are assumed to be negligible.
May 1999
2
Rev 1.000
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