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參數(shù)資料
| 型號： | PHN1013 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | N-channel enhancement mode MOS transistor |
| 中文描述： | 10 A, 30 V, 0.0135 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA |
| 封裝： | PLASTIC, SO-8 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 60K |
| 代理商： | PHN1013 |
1997 Jun 20
3
Philips Semiconductors
Objective specification
N-channel enhancement mode
MOS transistor
PHN1013
THERMAL CHARACTERISTICS
Note
1.
Device mounted on an FR4 printed-circuit board.
STATIC CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
DYNAMIC CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
R
th j-a
thermal resistance from junction to ambient
minimum footprint; t
p
≤
10 s; note 1
50
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
3
0.05
10
11
MAX.
4
4.4
10
500
100
13.5
26
UNIT
V
(BR)DSS
drain-source breakdown voltage V
GS
= 0; I
D
= 250
μ
A
30
27
2.1
1.4
V
V
V
V
V
μ
A
μ
A
nA
m
m
V
GS
= 0; I
D
= 250
μ
A; T
j
=
55
°
C
V
DS
= V
GS
; I
D
= 250
μ
A
V
DS
= V
GS
; I
D
= 250
μ
A; T
j
= 150
°
C
V
DS
= V
GS
; I
D
= 250
μ
A; T
j
=
55
°
C
V
DS
= 30 V; V
GS
= 0
V
DS
= 30 V; V
GS
= 0; T
j
= 150
°
C
V
GS
=
±
10 V; V
DS
= 0
V
GSth
gate-source threshold voltage
I
DSS
drain-source leakage current
I
GSS
R
DSon
gate leakage current
drain-source on-state resistance V
GS
= 10 V; I
D
= 10 A
V
GS
= 10 V; I
D
= 10 A; T
j
= 150
°
C
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
2200
450
260
UNIT
g
fs
C
iss
C
oss
C
rss
Q
G
Q
GS
Q
GD
forward transconductance
input capacitance
output capacitance
reverse transfer capacitance
total gate charge
gate-source charge
gate-drain charge
V
DS
= 25 V; I
D
= 10 A
V
GS
= 0; V
DS
= 25 V; f = 1 MHz
V
GS
= 0; V
DS
= 25 V; f = 1 MHz
V
GS
= 0; V
DS
= 25 V; f = 1 MHz
V
GS
= 5 V; V
DD
= 24 V; I
D
= 10 A
V
GS
= 5 V; V
DD
= 24 V; I
D
= 10 A
V
GS
= 5 V; V
DD
= 24 V; I
D
= 10 A
4
8
1700
325
214
27
3.5
15
S
pF
pF
pF
nC
nC
nC
Switching times
t
d(on)
turn-on delay time
V
GS
= 5 V; V
DD
= 25 V; I
D
= 10 A;
R
gen
= 10
resistive load
V
GS
= 5 V; V
DD
= 25 V; I
D
= 10 A;
R
gen
= 10
resistive load
V
GS
= 5 V; V
DD
= 25 V; I
D
= 10 A;
R
gen
= 10
resistive load
V
GS
= 5 V; V
DD
= 25 V; I
D
= 10 A;
R
gen
= 10
resistive load
25
40
ns
t
d(off)
turn-off delay time
90
130
ns
t
r
rise time
75
125
ns
t
f
fall time
35
50
ns
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| PHN1015 | N-channel TrenchMOS transistor Logic level |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PHN1013T/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 10A I(D) | SO |
| PHN1015 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel TrenchMOS transistor Logic level |
| PHN1018 | 制造商:NXP Semiconductors 功能描述:MOSFET N SO-8 |
| PHN1018/T3 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR MOSFET SOT-96 |
| PHN103 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel enhancement mode MOS transistor |
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