參數(shù)資料
型號(hào): PHD66NQ03LT
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: Turret Lug, for 3.2mm panel thickness
中文描述: 66 A, 25 V, 0.0136 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
封裝: PLASTIC, SC-63, TO-252, DPAK-3
文件頁數(shù): 8/14頁
文件大小: 301K
代理商: PHD66NQ03LT
Philips Semiconductors
PHP/PHB/PHD66NQ03LT
N-channel TrenchMOS transistor
Product data
Rev. 02 — 10 December 2001
8 of 14
9397 750 09119
Koninklijke Philips Electronics N.V. 2001. All rights reserved.
T
j
= 25
°
C and 175
°
C; V
GS
= 0 V
Fig 12. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
I
D
= 50 A; V
DD
= 15 V
Fig 13. Gate-source voltage as a function of gate
charge; typical values.
03ag23
0
15
30
45
60
75
I
S
(A)
0
0.3
0.6
0.9
1.2
V
SD
(V)
T
j
= 25 oC
175 oC
V
GS
= 0 V
03ag25
0
2
4
6
8
10
0
10
20
30
Q
G
(nC)
V
GS
(V)
I
D
= 50 A
T
j
= 25 oC
V
DD
= 15 V
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