- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄382391 > PHD3N20E (NXP SEMICONDUCTORS) PowerMOS transistor PDF資料下載
參數(shù)資料
| 型號： | PHD3N20E |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | PowerMOS transistor |
| 中文描述： | 3.5 A, 200 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 56K |
| 代理商： | PHD3N20E |
Philips Semiconductors
Product specification
PowerMOS transistor
PHD3N20E
ELECTRICAL CHARACTERISTICS
T
j
= 25 C unless otherwise specified
SYMBOL
PARAMETER
V
(BR)DSS
Drain-source breakdown
voltage
V
(BR)DSS
/
Drain-source breakdown
T
j
voltage temperature coefficient
R
DS(ON)
Drain-source on resistance
V
GS(TO)
Gate threshold voltage
g
fs
Forward transconductance
I
DSS
Drain-source leakage current
CONDITIONS
V
GS
= 0 V; I
D
= 0.25 mA
MIN.
200
TYP.
-
MAX.
-
UNIT
V
V
DS
= V
GS
; I
D
= 0.25 mA
-
0.25
-
V/K
V
GS
= 10 V; I
= 2 A
V
DS
= V
; I
D
= 0.25 mA
V
DS
= 50 V; I
= 2 A
V
DS
= 200 V; V
GS
= 0 V
V
DS
= 160 V; V
GS
= 0 V; T
j
= 150 C
V
GS
=
±
30 V; V
DS
= 0 V
I
D
= 3.3 A; V
DD
= 160 V; V
GS
= 10 V
-
0.77
3.0
3.0
0.1
1
10
10
1.1
4.5
8
20
30
25
3.5
7.5
1.5
4.0
-
25
250
100
12
2
6
-
-
-
-
-
-
V
S
μ
A
μ
A
nA
nC
nC
nC
ns
ns
ns
ns
nH
nH
2.0
0.8
-
-
-
-
-
-
-
-
-
-
-
-
I
GSS
Q
g(tot)
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
d
L
s
Gate-source leakage current
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Internal drain inductance
Internal source inductance
V
DD
= 100 V; I
D
= 3.3 A;
R
G
= 24
; R
D
= 30
Measured from tab to centre of die
Measured from source lead solder
point to source bond pad
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Feedback capacitance
-
-
-
200
48
20
-
-
-
pF
pF
pF
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
T
j
= 25 C unless otherwise specified
SYMBOL
PARAMETER
I
S
Continuous source current
(body diode)
I
SM
Pulsed source current (body
diode)
V
SD
Diode forward voltage
t
rr
Reverse recovery time
CONDITIONS
T
mb
= 25C
MIN.
-
TYP.
-
MAX.
3.5
UNIT
A
T
mb
= 25C
-
-
14
A
I
S
= 3.3 A; V
GS
= 0 V
I
= 3.3 A; V
GS
= 0 V;
dI/dt = 100 A/
μ
s
-
-
-
1.5
-
V
ns
90
Q
rr
Reverse recovery charge
-
0.5
-
μ
C
September 1997
2
Rev 1.000
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PHD3N20L | PowerMOS transistor Logic level FET |
| PHD95N03LT | N-channel enhancement mode field-effect transistor |
| PHK4NQ20T | TrenchMOS standard level FET |
| PHM21NQ15T | TrenchMOS standard level FET |
| PHM25NQ10T | TrenchMOS standard level FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PHD3N20L | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level FET |
| PHD3N40E | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistors Avalanche energy rated |
| PHD44N06LT | 制造商:NXP Semiconductors 功能描述:MOSFET N D-PAK |
| PHD45N03LTA | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel enhancement mode field-effect transistor |
| PHD45N03LTA,118 | 功能描述:MOSFET TAPE13 MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。