參數(shù)資料
型號(hào)： PHD3055E
廠商： NXP SEMICONDUCTORS
元件分類(lèi)： JFETs
英文描述： PowerMOS transistor
中文描述： 10.3 A, 60 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
封裝： PLASTIC, SC-63, DPAK-3
文件頁(yè)數(shù)： 2/7頁(yè)
文件大小： 72K
代理商： PHD3055E
Philips Semiconductors
Product specification
PowerMOS transistor
PHD3055E
ELECTRICAL CHARACTERISTICS
T
j
= 25 C unless otherwise specified
SYMBOL
PARAMETER
V
(BR)DSS
Drain-source breakdown
voltage
V
(BR)DSS
/
Drain-source breakdown
T
j
voltage temperature coefficient
R
DS(ON)
Drain-source on resistance
V
GS(TO)
Gate threshold voltage
g
fs
Forward transconductance
I
DSS
Drain-source leakage current
CONDITIONS
V
GS
= 0 V; I
D
= 0.25 mA
MIN.
60
TYP.
-
MAX.
-
UNIT
V
V
DS
= V
GS
; I
D
= 0.25 mA
-
0.08
-
V/K
V
GS
= 10 V; I
= 6 A
V
DS
= V
; I
D
= 0.25 mA
V
DS
= 50 V; I
D
= 6 A
V
DS
= 60 V; V
GS
= 0 V
V
DS
= 48 V; V
GS
= 0 V; T
j
= 150 C
V
GS
=
±
30 V; V
DS
= 0 V
I
D
= 10 A; V
DD
= 48 V; V
GS
= 10 V
-
0.1
3.0
4.0
0.1
1
10
10
2
5.6
8
55
25
22
3.5
7.5
0.15
4.0
-
25
250
100
12
3
7
-
-
-
-
-
-
V
S
μ
A
μ
A
nA
nC
nC
nC
ns
ns
ns
ns
nH
nH
2.0
2.4
-
-
-
-
-
-
-
-
-
-
-
-
I
GSS
Q
g(tot)
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
d
L
s
Gate-source leakage current
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Internal drain inductance
Internal source inductance
V
DD
= 30 V; I
D
= 10 A;
R
G
= 24
; R
D
= 2.7
Measured from tab to centre of die
Measured from source lead solder
point to source bond pad
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Feedback capacitance
-
-
-
220
108
48
-
-
-
pF
pF
pF
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
T
j
= 25 C unless otherwise specified
SYMBOL
PARAMETER
I
S
Continuous source current
(body diode)
I
SM
Pulsed source current (body
diode)
V
SD
Diode forward voltage
t
rr
Reverse recovery time
CONDITIONS
T
mb
= 25C
MIN.
-
TYP.
-
MAX.
12
UNIT
A
T
mb
= 25C
-
-
48
A
I
S
= 10 A; V
GS
= 0 V
I
= 10 A; V
= 0 V;
dI/dt = 100 A/
μ
s
-
-
-
1.5
-
V
ns
38
Q
rr
Reverse recovery charge
-
0.1
-
μ
C
September 1997
2
Rev 1.000
相關(guān)PDF資料
PDF描述
PHD3055L PowerMOS transistor Logic level FET
PHD3N20E PowerMOS transistor
PHD3N20L PowerMOS transistor Logic level FET
PHD95N03LT N-channel enhancement mode field-effect transistor
PHK4NQ20T TrenchMOS standard level FET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PHD3055E,118 功能描述:MOSFET N-CH TRNCH 60V 10.3A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PHD3055L 制造商:PHILIPS 制造商全稱(chēng):NXP Semiconductors 功能描述:PowerMOS transistor Logic level FET
PHD32UAA 制造商:POWER-ONE 制造商全稱(chēng):Power-One 功能描述:PHD32 Series . 32A Non-Isolated DC/DC Converter 5V, 3.3V Input Dual Output
PHD32UAY 制造商:POWER-ONE 制造商全稱(chēng):Power-One 功能描述:PHD32 Series . 32A Non-Isolated DC/DC Converter 5V, 3.3V Input Dual Output
PHD32UBA 制造商:POWER-ONE 制造商全稱(chēng):Power-One 功能描述:PHD32 Series . 32A Non-Isolated DC/DC Converter 5V, 3.3V Input Dual Output
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*