參數(shù)資料
型號： PHD10N10E
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： PowerMOS transistor(功率MOS晶體管)
中文描述： 11 A, 100 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： PLASTIC, SOT-428, 3 PIN
文件頁數(shù)： 5/7頁
文件大?。?/td> 76K
代理商： PHD10N10E
Philips Semiconductors
Product Specification
PowerMOS transistor
PHD10N10E
Fig.13. Typical turn-on gate-charge characteristics.
V
GS
= f(Q
G
); conditions: I
D
= 11 A; parameter V
DS
Fig.14. Typical reverse diode current.
I
F
= f(V
SDS
); conditions: V
GS
= 0 V; parameter T
j
Fig.15. Normalised avalanche energy rating.
W
DSS
% = f(T
mb
); conditions: I
D
= 11 A
Fig.16. Avalanche energy test circuit.
W
DSS
=
0.5
LI
D
0
2
4
6
8
10
QG / nC
VGS / V
12
10
8
6
4
2
0
VDS / V =20
80
BUK452-100
20
40
60
80
100
Tmb / C
120
140
160
180
120
110
100
90
80
70
60
50
40
30
20
10
0
WDSS%
0
1
2
BUK452-100A
VSDS / V
20
10
0
IF / A
150
25
Tj / C =
L
T.U.T.
VDD
RGS
R 01
shunt
VDS
-ID/100
+
-
VGS
0
2
BV
DSS
/(
BV
DSS
V
DD
)
September 1997
5
Rev 1.000
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