參數(shù)資料
型號： PHD10N10E
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： PowerMOS transistor(功率MOS晶體管)
中文描述： 11 A, 100 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： PLASTIC, SOT-428, 3 PIN
文件頁數(shù)： 3/7頁
文件大?。?/td> 76K
代理商： PHD10N10E
Philips Semiconductors
Product Specification
PowerMOS transistor
PHD10N10E
Fig.1. Normalised power dissipation.
PD% = 100
P
D
/P
D 25 C
= f(T
mb
)
Fig.2. Normalised continuous drain current.
ID% = 100
I
D
/I
D 25 C
= f(T
mb
); conditions: V
GS
≥
10 V
Fig.3. Safe operating area. T
= 25 C
I
D
& I
DM
= f(V
DS
); I
DM
single pulse; parameter t
p
Fig.4. Transient thermal impedance.
Z
th j-mb
= f(t); parameter D = t
p
/T
Fig.5. Typical output characteristics, T
j
= 25 C
I
D
= f(V
DS
); parameter V
GS
Fig.6. Typical on-state resistance, T
j
= 25 C
R
DS(ON)
= f(I
D
); parameter V
GS
0
20
40
60
80
Tmb / C
100
120
140
160
180
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
1E-07
1E-05
1E-03
t / s
1E-01
1E+01
Zth j-mb / (K/W)
1E+01
1E+00
1E-01
1E-02
0
0.5
0.2
0.1
0.05
0.02
D =
t
p
t
p
T
T
P
D
t
BUKX52
0
20
40
60
80
Tmb / C
100
120
140
160
180
ID%
Normalised Current Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
0
2
4
6
8
10
BUK452-100A
VDS / V
20
15
10
5
0
4
5
6
7
8
10
20
ID / A
VGS / V =
1
100
VDS / V
ID / A
100
10
1
0.1
BUK452-100
10
tp = 10 us
100 us
1 ms
10 ms
100 ms
DC
RDSON =VDSID
A
B
0
2
4
6
8
10
12
14
16
18
20
BUK452-100A
ID / A
1.0
0.8
0.6
0.4
0.2
0
4.5 5
5.5
6
6.5
7
7.5
8
10
20
RDS(ON) / Ohm
VGS / V =
September 1997
3
Rev 1.000
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