參數(shù)資料
型號(hào)： PHD10N10E
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： PowerMOS transistor(功率MOS晶體管)
中文描述： 11 A, 100 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： PLASTIC, SOT-428, 3 PIN
文件頁數(shù)： 2/7頁
文件大?。?/td> 76K
代理商： PHD10N10E
Philips Semiconductors
Product Specification
PowerMOS transistor
PHD10N10E
STATIC CHARACTERISTICS
T
j
= 25 C unless otherwise specified
SYMBOL
PARAMETER
V
(BR)DSS
Drain-source breakdown
voltage
V
GS(TO)
Gate threshold voltage
I
DSS
Zero gate voltage drain current
I
DSS
Zero gate voltage drain current
I
GSS
Gate source leakage current
R
DS(ON)
Drain-source on-state
resistance
CONDITIONS
V
GS
= 0 V; I
D
= 0.25 mA
MIN.
100
TYP.
-
MAX.
-
UNIT
V
V
DS
= V
; I
= 1 mA
V
DS
= 100 V; V
GS
= 0 V; T
j
= 25 C
V
DS
= 100 V; V
GS
= 0 V; T
j
= 125 C
V
GS
=
±
30 V; V
= 0 V
V
GS
= 10 V; I
D
= 5.5 A
2.1
-
-
-
-
3.0
1
0.1
10
0.22
4.0
10
1.0
100
0.25
V
μ
A
mA
nA
DYNAMIC CHARACTERISTICS
T
j
= 25 C unless otherwise specified
SYMBOL
PARAMETER
g
fs
Forward transconductance
C
iss
Input capacitance
C
oss
Output capacitance
C
rss
Feedback capacitance
t
d on
Turn-on delay time
t
r
Turn-on rise time
t
d off
Turn-off delay time
t
f
Turn-off fall time
L
d
Internal drain inductance
L
s
Internal source inductance
CONDITIONS
V
DS
= 25 V; I
D
= 5.5 A
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz
MIN.
3
-
-
-
-
-
-
-
-
-
TYP.
4.2
400
90
35
9
25
30
20
4.5
7.5
MAX.
-
500
120
50
14
40
45
40
-
-
UNIT
S
pF
pF
pF
ns
ns
ns
ns
nH
nH
V
DD
= 30 V; I
D
= 3 A;
V
GS
= 10 V; R
GS
= 50
;
R
gen
= 50
Measured from tab to centre of die
Measured from source lead solder
point to source bond pad
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
j
= 25 C unless otherwise specified
SYMBOL
PARAMETER
I
DR
Continuous reverse drain
current
I
DRM
Pulsed reverse drain current
V
SD
Diode forward voltage
t
rr
Reverse recovery time
Q
rr
Reverse recovery charge
CONDITIONS
-
MIN.
-
TYP.
-
MAX.
11
UNIT
A
-
I
F
= 11 A ; V
GS
= 0 V
I
F
= 11 A; -dI
F
/dt = 100 A/
μ
s;
V
GS
= 0 V; V
R
= 30 V
-
-
-
-
-
44
1.5
-
-
A
V
ns
μ
C
1.2
90
0.35
AVALANCHE LIMITING VALUE
T
mb
= 25 C unless otherwise specified
SYMBOL
PARAMETER
W
DSS
Drain-source non-repetitive
unclamped inductive turn-off
energy
CONDITIONS
I
D
= 11 A ; V
≤
50 V ;
V
GS
= 10 V ; R
GS
= 50
MIN.
-
TYP.
-
MAX.
35
UNIT
mJ
September 1997
2
Rev 1.000
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