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參數(shù)資料
| 型號(hào)： | PHB9N60E |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | PowerMOS transistors Avalanche energy rated |
| 中文描述： | 9 A, 600 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, SOT-404, 3 PIN |
| 文件頁(yè)數(shù)： | 7/9頁(yè) |
| 文件大?。?/td> | 102K |
| 代理商： | PHB9N60E |
Philips Semiconductors
Product specification
PowerMOS transistors
Avalanche energy rated
PHB9N60E, PHW9N60E
MECHANICAL DATA
Dimensions in mm
Net Mass: 1.4 g
Fig.19. SOT404 : centre pin connected to mounting base.
MOUNTING INSTRUCTIONS
Dimensions in mm
Fig.20. SOT404 : soldering pattern for surface mounting
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.
2. Epoxy meets UL94 V0 at 1/8".
11 max
4.5 max
1.4 max
10.3 max
0.5
15.4
2.5
0.85 max
(x2)
2.54 (x2)
17.5
11.5
9.0
5.08
3.8
2.0
December 1998
7
Rev 1.000
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