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參數(shù)資料
| 型號： | PHB9N60E |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | PowerMOS transistors Avalanche energy rated |
| 中文描述： | 9 A, 600 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, SOT-404, 3 PIN |
| 文件頁數(shù)： | 6/9頁 |
| 文件大?。?/td> | 102K |
| 代理商： | PHB9N60E |
Philips Semiconductors
Product specification
PowerMOS transistors
Avalanche energy rated
PHB9N60E, PHW9N60E
Fig.13. Typical turn-on gate-charge characteristics.
V
GS
= f(Q
G
); parameter V
DS
Fig.14. Typical switching times; t
d(on)
, t
r
, t
d(off)
, t
f
= f(R
G
)
Fig.15. Normalised drain-source breakdown voltage;
V
(BR)DSS
/V
(BR)DSS 25 C
= f(T
j
)
Fig.16. Source-Drain diode characteristic.
I
F
= f(V
SDS
); parameter T
j
Fig.17. Maximum permissible non-repetitive
avalanche current (I
) versus avalanche time (t
p
);
unclamped inductive load
Fig.18. Maximum permissible repetitive avalanche
current (I
AR
) versus avalanche time (t
p
)
PHP10N60E
0
1
2
3
4
5
6
7
8
9
10
12
14
0
20
40
Gate charge, QG (nC)
60
80
100
120
Gate-source voltage, VGS (V)
VDD=480V
200V
100 V
ID = 10A
Tj = 25 C
PHP10N60E
0
2
4
6
8
10
12
14
16
18
20
0
0.2
0.4
0.6
0.8
1
1.2
Drain-Source Voltage, VSDS (V)
Source-Drain Diode Current, IF (A)
Tj = 25 C
150 C
PHP10N60E
0
50
100
150
200
250
300
350
400
450
500
0
10
20
30
40
50
Gate resistance, RG (Ohms)
Switching times, td(on), tr, td(off), tf (ns)
td(on)
td(off)
tr
tf
VDD = 300V
RD = 30 Ohms
PHP10N60E
0.1
1
10
1E-06
1E-05
1E-04
1E-03
1E-02
Avalanche time, tp (s)
Non-repetitive Avalanche current, IAS (A)
25 C
Tj prior to avalanche = 125 C
VDS
ID
tp
-100
-50
0
50
100
150
0.85
0.9
0.95
1
1.05
1.1
1.15
Tj, Junction temperature (C)
Normalised Drain-source breakdown voltage
V(BR)DSS @ Tj
V(BR)DSS @ 25 C
PHP10N60E
0.01
0.1
1
10
100
1E-06
1E-05
1E-04
1E-03
1E-02
Avalanche time, tp (s)
Maximum Repetitive Avalanche Current, IAR (A)
Tj prior to avalanche = 25 C
125 C
December 1998
6
Rev 1.000
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