參數(shù)資料
型號: PHB9N60E
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: PowerMOS transistors Avalanche energy rated
中文描述: 9 A, 600 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: PLASTIC, SOT-404, 3 PIN
文件頁數(shù): 3/9頁
文件大?。?/td> 102K
代理商: PHB9N60E
Philips Semiconductors
Product specification
PowerMOS transistors
Avalanche energy rated
PHB9N60E, PHW9N60E
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
T
j
= 25 C unless otherwise specified
SYMBOL PARAMETER
I
S
Continuous source current
(body diode)
I
SM
Pulsed source current (body
diode)
V
SD
Diode forward voltage
t
rr
Reverse recovery time
Q
rr
Reverse recovery charge
CONDITIONS
T
mb
= 25C
MIN.
-
TYP. MAX. UNIT
-
9
A
T
mb
= 25C
-
-
36
A
I
S
= 9 A; V
GS
= 0 V
I
S
= 9 A; V
GS
= 0 V; dI/dt = 100 A/
μ
s
-
-
-
-
1.2
-
-
V
ns
μ
C
740
9
December 1998
3
Rev 1.000
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