參數(shù)資料
型號(hào): PHB82NQ03LT
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: TrenchMOS⑩ logic level FET
中文描述: 75 A, 30 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: PLASTIC, D2PAK-3
文件頁數(shù): 7/14頁
文件大小: 274K
代理商: PHB82NQ03LT
Philips Semiconductors
PHP/PHB/PHD82NQ03LT
TrenchMOS logic level FET
Product data
Rev. 01 — 28 March 2002
7 of 14
9397 750 09308
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
I
D
= 1 mA; V
DS
= V
GS
Fig 9.
Gate-source threshold voltage as a function of
junction temperature.
T
j
= 25
°
C; V
DS
= 5 V
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
V
GS
= 0 V; f = 1 MHz
Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.
03ai29
0
0.8
1.6
2.4
3.2
-60
0
60
120
180
T
j
(oC)
V
GS(th)
(V)
min
typ
max
03ai28
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
I
D
(A)
0
0.8
1.6
2.4
3.2
V
GS
(V)
typ
max
min
03ai60
102
103
104
10-1
1
10
102
V
DS
(V)
C
(pF)
C
iss
C
oss
C
rss
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